Electrically active oxide defects in Ni/Al2O3/4H-SiC diodes mimicking CAV-related defect levels

Journal:

Applied Physics Letters

Published:

2026-04-20

DOI:

10.1063/5.0329725

Affiliations:

2

Authors:

7

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Institutions	Authors	Share
University of South Carolina - Columbia (SC), United States of America (USA)	7.000000	1.00

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