AlN/GaN/InGaN interface engineering for high-efficiency InGaN-based red quantum wells grown on Si

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0331044
Affiliations:
4
Authors:
8
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Institutions Authors Share
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, China
3.833333
 0.48
University of Science and Technology of China (USTC), China
2.000000
 0.25
School of Integrated Circuits, NJU, China
1.333333
 0.17
Suzhou Laboratory, China
0.833333
 0.10
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