High-performance HfO2 dielectric gated Ge-doped κ-Ga2O3 thin-film transistors

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0331423
Affiliations:
3
Authors:
8
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Institutions Authors Share
Hubei University (HUBU), China
4.000000
 0.50
Wuhan Textile University (WTU), China
3.000000
 0.38
Erich Schmid Institute of Materials Science (ESI), ÖAW, Austria
1.000000
 0.13
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