Three-dimensional characterization of laser-induced stress in a bulk GaN substrate using stimulated Raman scattering microscopy

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0331564
Affiliations:
3
Authors:
5
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Institutions Authors Share
The University of Tokyo (UTokyo), Japan
4.000000
 0.80
Nagoya University, Japan
1.000000
 0.20