Microscopic origin of dopant-dependent defect states and carrier compensation in Si- and Sn-doped β-Ga2O3

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0332528
Affiliations:
7
Authors:
10
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Institutions Authors Share
Wuhan University (WHU), China
3.000000
 0.30
State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS), XMU, China
1.500000
 0.15
College of Physical Science and Technology, XMU, China
1.500000
 0.15
Shanghai Institute of Optics and Fine Mechanics (SIOM), CAS, China
1.500000
 0.15
Shanghai Key Laboratory of Wide and Ultra-Wide Bandgap Semiconductor Materials, China
1.500000
 0.15
Diamond Light Source Ltd., United Kingdom (UK)
1.000000
 0.10
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