Engineering stable conductive filament formation in MoS2 resistive random access memory via process-controlled metal incorporation into defects for enhanced electrochemical metallization switching

Journal:

Applied Physics Letters

Published:

2026-05-25

DOI:

10.1063/5.0332589

Affiliations:

2

Authors:

4

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Institutions	Authors	Share
Dankook University (DKU), South Korea	4.000000	1.00

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