Achieving an ultra-thin GaN channel layer in AlGaN/GaN/AlN high electron mobility transistors

Journal:

Applied Physics Letters

Published:

2026-04-20

DOI:

10.1063/5.0333037

Affiliations:

4

Authors:

16

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Institutions	Authors	Share
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, PKU, China	11.000000 11.000000	0.69
Xi'an Jiaotong - Liverpool University (XJTLU), China	2.000000	0.13
Jiangsu NATA Opto‐Electronic Materials Ltd., China	2.000000	0.13
Peking University (PKU), China	1.000000	0.06

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