Interplay between efficiency, spectral linewidth, and strain engineering of InGaN-based green LEDs grown on Si

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0334010
Affiliations:
4
Authors:
10
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Institutions Authors Share
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, China
5.500000
 0.55
University of Science and Technology of China (USTC), China
2.500000
 0.25
Suzhou LEKIN Semiconductor Co., Ltd., China
2.000000
 0.20
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