Investigation of origin of polycrystalline defect in homoepitaxial (0 ) β-Ga2 O3 layers grown by halide vapor phase epitaxy using synchrotron x-ray topography and energy-dispersive x-ray spectroscopy
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0335272
- Affiliations:
- 1
- Authors:
- 7
| Institutions | Authors | Share |
|---|---|---|
| Novel Crystal Technology, Inc., Japan | 1.00 |