Defect characterization of amorphous selenium-doped Ga2O3 grown by radio frequency sputtering

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0336396
Affiliations:
4
Authors:
9
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Institutions Authors Share
Dongguan Institute of Materials Science and Technology (DIMST), CAS, China
4.000000
 0.44
The University of Hong Kong (HKU), China
2.500000
 0.28
University of Oslo (UiO), Norway
2.000000
 0.22
Dalian University of Technology (DUT), China
0.500000
 0.06