Improved ferroelectric properties in lanthanide-doped HfO2 thin films epitaxially grown on yttria-stabilized zirconia substrates

Journal:: Applied Physics Letters
Published:: 2026-06-22
DOI:: 10.1063/5.0337202
Affiliations:: 2
Authors:: 13

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Institutions	Authors	Share
Qingdao University (QU), China	13.000000 13.000000	1.00

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