Gate-Tunable Spin Switching Effect and Bilinear Magnetoelectric Resistance in the Topological Semimetal

Journal:

Physical Review Letters

Published:

2026-01-20

DOI:

10.1103/7m1l-xf1w

Affiliations:

4

Authors:

9

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Institutions	Authors	Share
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, PKU, China	4.500000	0.50
University of Twente (UTwente), Netherlands	2.000000	0.22
Peking University (PKU), China	2.000000	0.22
Institute of Artificial Intelligence, Hefei Comprehensive National Science Center, China	0.500000	0.06

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