Revisiting the mechanisms of thermal transport in vacancy-defective silicon

Journal:

Physical Review B

Published:

2025-12-15

DOI:

10.1103/fl1h-kbv3

Affiliations:

5

Authors:

4

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Institutions	Authors	Share
ZJU-UIUC Institute, China	1.000000	0.25
The University of Tokyo (UTokyo), Japan	1.000000	0.25
Shandong Institute of Advanced Technology (SDIAT), SIAT CAS, China	1.000000	0.25
Software Center for High Performance Numerical Simulation (SCNS), CAEP, China	0.500000	0.13
Institute of Applied Physics and Computational Mathematics (IAPCM), China	0.500000	0.13

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