Overcoming asymmetric carrier injection in III-nitride light-emitting diodes through defect engineering

Journal:

Physical Review Letters

Published:

2025-07-08

DOI:

10.1103/kt15-x472

Affiliations:

3

Authors:

13

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Institutions	Authors	Share
Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), CAS, China	6.000000	0.46
University of Chinese Academy of Sciences (UCAS), China	5.000000	0.38
Eastern Institute of Technology, Ningbo (EIT), China	2.000000	0.15

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