Nearly Temperature-Independent Gate-Electric-Field-Driven Lateral Migration of Electrons in Si3⁢N4 Charge Trap Layer of Flash Memory Devices

Journal:
Physical Review Letters
Published:
DOI:
10.1103/lj4r-dcb7
Affiliations:
4
Authors:
6
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Institutions Authors Share
Seoul National University (SNU), South Korea
2.500000
 0.42
SK Hynix Inc., South Korea
1.500000
 0.25
Gachon University (GCU), South Korea
1.000000
 0.17
Yonsei University, South Korea
1.000000
 0.17
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