Strain gradient engineered flexophotovoltaics and spin polarization in bent MoSi2⁢N4 nanoribbons

Journal:

Physical Review B

Published:

2025-12-05

DOI:

10.1103/z4m4-z59l

Affiliations:

3

Authors:

6

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Institutions	Authors	Share
MOE Key Laboratory of Low-dimensional Quantum Structures and Quantum Control, HUNNU, China	4.500000	0.75
Yangtze University (YU), China	1.000000	0.17
State Key Laboratory of Optoelectronic Materials and Technologies (OEMT), SYSU, China	0.500000	0.08

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