Enhanced gating efficiency in vertical mixed molecular transistors with deep orbital level

Journal:
Science Advances
Published:
DOI:
10.1126/sciadv.adt3603
Affiliations:
3
Authors:
15
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Institutions Authors Share
Seoul National University (SNU), South Korea
11.000000
11.000000
 0.73
Korea Advanced Institute of Science and Technology (KAIST), South Korea
4.000000
 0.27
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