General principle of ferroelectric topological domain formation

Journal:

Science Advances

Published:

2025-06-20

DOI:

10.1126/sciadv.adu6223

Affiliations:

3

Authors:

15

Go to article

Institutions	Authors	Share
Beijing Institute of Technology (BIT), China	12.500000 12.500000	0.83
State Key Laboratory of New Ceramics and Fine Processing, Tsinghua, China	1.500000	0.10
University of Wollongong (UOW), Australia	1.000000	0.07

Interested in Quantum Physics?