Emergence of unconventional ferroelectric phase in ultrathin Hf0.5Zr0.5O2 films

Journal:

Science Advances

Published:

2026-05-22

DOI:

10.1126/sciadv.adz8245

Affiliations:

4

Authors:

15

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Institutions	Authors	Share
Samsung Advanced Institute of Technology (SAIT), South Korea	9.500000	0.63
Samsung Electronics Co., Ltd., South Korea	3.000000	0.20
Pohang University of Science and Technology (POSTECH), South Korea	2.000000	0.13
Jeonbuk National University (JBNU), South Korea	0.500000	0.03

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