Unlocking the performance limits of 2T0C DRAM with Ω-shaped-gated single-crystal In2O3 FETs

Journal:

Science Advances

Published:

2026-05-29

DOI:

10.1126/sciadv.aec3934

Affiliations:

6

Authors:

17

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Institutions	Authors	Share
State Key Laboratory of Chemo and Biosensing, HNU, China	9.000000	0.53
Henan Normal University, China	2.000000	0.12
National University of Defense Technology (NUDT), China	2.000000	0.12
Institute of Microelectronics (IME), CAS, China	2.000000	0.12
ChangChun University of Science and Technology (CUST), China	1.000000	0.06
Hubei University (HUBU), China	1.000000	0.06

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