Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors

Journal:

Science

Published:

2025-06-12

DOI:

10.1126/science.adp8444

Affiliations:

5

Authors:

16

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Institutions	Authors	Share
Southeast University (SEU), China	7.500000	0.47
State Key Laboratory of Chemo and Biosensing, HNU, China	5.500000	0.34
Hefei University of Technology (HFUT), China	2.000000	0.13
University of California, Los Angeles (UCLA), United States of America (USA)	1.000000	0.06

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