Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors

Journal:

Science

Published:

2025-07-10

DOI:

10.1126/science.adx6955

Affiliations:

5

Authors:

8

Go to article

Institutions	Authors	Share
Stanford University, United States of America (USA)	4.000000	0.50
University of California, Berkeley (UC Berkeley), United States of America (USA)	2.666667	0.33
Lawrence Berkeley National Laboratory (LBNL), United States of America (USA)	1.333333	0.17

Interested in Nanotechnology?