Copper(I) Thiocyanate in Optoelectronic Applications

Copper(I) thiocyanate (CuSCN) is a p-type, wide-band-gap semiconductor distinguished by its transparent appearance, facile solution processability and earth-abundant composition. The material’s crystal structure comprises copper centres coordinated by pseudohalide thiocyanate ligands, forming extended networks that combine high hole mobility with chemical and thermal robustness. These attributes have led to its deployment as a hole-transport or hole-injection layer in diverse optoelectronic devices, including organic light-emitting diodes (OLEDs), perovskite and organic photovoltaics, and ultraviolet photodetectors. Recent efforts have focused on tailoring film morphology, energy-level alignment and interfacial stability through compositional tuning, additive engineering and post-deposition treatments. Owing to its compatibility with low-temperature, scalable coating methods, CuSCN holds promise for cost-effective, large-area manufacturing of next-generation display and solar technologies.

Research from Nature Portfolio

Recent studies have demonstrated that embedding CuSCN nanoplatelets within a p-type semiconducting polymer matrix can impart dual functionality as a hole-extraction layer and water-splitting catalyst in lead-halide perovskite solar cells. The in situ oxidation of incoming moisture improves charge extraction and p-doping of the polymer, preserving stable photovoltaic performance under high humidity for extended periods. Another investigation into inverted tin-based perovskite photovoltaics revealed that CuSCN films are often displaced by the perovskite during solution deposition, resulting in incomplete hole-transport coverage. This finding underscores the critical role of interfacial adhesion and processing sequences in determining device yield and has prompted the design of alternative layer architectures for tin-perovskite junctions.

Copper(I) Thiocyanate in Optoelectronic Applications publication trend

The graph below shows the total number of articles in copper(i) thiocyanate in optoelectronic applications across all publications each year (not limited to Nature Index journals).

Technical terms

Hole-transport layer: Semiconductor film that selectively conducts positive charge carriers (holes) toward an electrode.

Band gap: Energy difference between the valence band and conduction band that defines a semiconductor’s optical absorption threshold.

Work function: Minimum energy needed to remove an electron from a material’s surface to the vacuum level.

Heterojunction: Interface between two different semiconductors, where band offsets drive charge separation or injection.

P-type semiconductor: Material doped or structured so that electrical conduction is dominated by hole carriers.

References

1. Inorganic Metal Thiocyanates. Inorganic Chemistry (2024).
2. High‐Efficiency, Solution‐Processed, Multilayer Phosphorescent Organic Light‐Emitting Diodes with a Copper Thiocyanate Hole‐Injection/Hole‐Transport Layer. Advanced Materials (2014).
3. Moisture resistance in perovskite solar cells attributed to a water-splitting layer. Communications Materials (2021).
4. Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics. Scientific Reports (2018).
5. Chlorine-Infused Wide-Band Gap p‑CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors. ACS Applied Materials & Interfaces (2022).
6. Electronic Structure and Surface Properties of Copper Thiocyanate: A Promising Hole Transport Material for Organic Photovoltaic Cells. Materials (2020).