Doping Mechanisms in Halide Perovskite Materials
Summary
Halide perovskites exhibit remarkable optoelectronic properties that are highly tunable through intentional doping. By introducing aliovalent or isovalent ions at the A, B or X sites of the ABX₃ lattice, researchers can tailor band gaps, carrier concentrations and trap densities. Substitutional doping at the B-site commonly employs monovalent or trivalent metal ions to modulate conductivity and charge balance, whereas anionic doping—such as halide mixing—enables fine control over the absorption spectrum. The soft, polarizable lattice of halide perovskites allows for polaron formation and dynamic defect compensation, giving rise to high defect tolerance and self-healing behaviour. However, the ionic nature of these materials also leads to challenges in achieving stable and homogeneous dopant distributions, with ion migration and redox side reactions often complicating device performance. Surface and interface doping strategies have emerged to passivate trap states and improve environmental stability without compromising the intrinsic properties of the bulk crystal. Overall, understanding the interplay between lattice dynamics, defect chemistry and dopant–host interactions is crucial for advancing perovskite solar cells, light-emitting diodes and photodetectors.
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Doping Mechanisms in Halide Perovskite Materials publication trend
The graph below shows the total number of articles in doping mechanisms in halide perovskite materials across all publications each year (not limited to Nature Index journals).
Technical terms
Aliovalent doping: Introduction of ions with a different valence than the host cation, leading to charge imbalance and defect formation.
Polaronic stabilisation: Local distortion of the lattice around a charge carrier, which can affect mobility and recombination.
Substitutional doping: Replacement of a host ion in the lattice by a dopant ion of similar size but differing electronic properties.
Defect tolerance: The ability of a material to maintain performance despite the presence of defects or impurities.
References
- A Multi-Dimensional Perspective on Electronic Doping in Metal Halide Perovskites. ACS Energy Letters (2021).
- Bandgap Engineering via Doping Strategies for Narrowing the Bandgap below 1.2 eV in Sn/Pb Binary Perovskites: Unveiling the Role of Bi3+ Incorporation on Different A-Site Compositions. Nanomaterials (2024).
- Effects of Bi and Sb ion incorporation on the optoelectronic properties of mixed lead–tin perovskites. Journal of Materials Chemistry C (2025).
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