Epitaxial Growth Techniques for Boron-Doped III-V Semiconductors

The epitaxial growth of boron-doped III–V semiconductors combines atomic-level control of composition with the incorporation of boron into GaAs, InGaAs, GaP and related alloys. Molecular beam epitaxy (MBE) and metal–organic chemical vapour deposition (MOCVD) are the primary platforms, each offering distinct advantages for film uniformity, doping precision and throughput. Boron’s low solubility and surfactant behaviour present challenges in maintaining smooth morphologies and achieving homogeneous distribution. Strategies to overcome these include the use of superlattice structures, quantum wells and nanowire templates, as well as tuning substrate temperature, precursor flux and growth rate. Controlled incorporation of boron enables modification of band structure, strain management and p-type doping, opening routes to lasers, high-electron-mobility transistors, integrated photonics and radiation-hardened devices, particularly for heterogeneous integration on silicon platforms.

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Epitaxial Growth Techniques for Boron-Doped III-V Semiconductors publication trend

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Technical terms

Epitaxy: Growth of a crystalline layer on a substrate with a defined orientation relationship.

Molecular Beam Epitaxy (MBE): A vacuum-based technique delivering atomic beams for layer-by-layer crystal growth with precise composition control.

Metal–Organic Chemical Vapour Deposition (MOCVD): A chemical vapour deposition method using metal-organic precursors to deposit epitaxial films with high uniformity and scalability.

III–V Semiconductors: Compounds formed by elements from groups III and V of the periodic table, valued for direct band-gaps and high electron mobility.

Surfactant Behaviour: A phenomenon whereby an additive (e.g. boron) modifies surface energy and adatom diffusion during growth, affecting morphology and incorporation.

References

1. Growth rate dependence of boron incorporation into BxGa1−xAs layers. Journal of Crystal Growth (2017).
2. Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy. Nanotechnology (2018).
3. Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires. physica status solidi (b) (2018).
4. Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP. Journal of Physics D (2021).