Graphene-Based Optoelectronic Devices for Solar Energy Conversion
Summary
Graphene’s single-atom thickness, high carrier mobility and broad optical transparency make it a uniquely versatile electrode and active layer in solar energy devices. Its tunable work function allows formation of Schottky junctions with silicon and III–V semiconductors, while van der Waals heterostructures with two-dimensional dielectrics or perovskite quantum dots enhance charge separation and light absorption. Strategies such as direct growth on textured substrates, insertion of atomically thin interlayers and hybrid integration with quantum-confined materials have pushed power conversion efficiencies into the low double digits. These architectures combine facile fabrication, mechanical flexibility and long-term operational stability, opening routes to lightweight panels, building-integrated photovoltaics and wearable energy harvesters. As research converges on interface engineering and quantum-scale light management, graphene-based optoelectronic devices stand poised to address global demands for scalable, low-cost renewable energy.
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Graphene-Based Optoelectronic Devices for Solar Energy Conversion publication trend
The graph below shows the total number of articles in graphene-based optoelectronic devices for solar energy conversion across all publications each year (not limited to Nature Index journals).
Technical terms
Schottky junction: a rectifying interface between a conductor (graphene) and a semiconductor enabling photovoltaic charge separation.
Power conversion efficiency (PCE): the ratio of electrical power output from a solar cell to the incident solar power input.
Van der Waals heterostructure: a stack of two-dimensional materials held together by weak interlayer forces without chemical bonds.
Work function: the minimum energy required to remove an electron from a solid to a point immediately outside its surface.
Perovskite quantum dots: semiconductor nanocrystals with perovskite structures offering tunable bandgaps and high absorption.
References
- Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections: Current status and perspectives. InfoMat (2023).
- Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes. Physical Review X (2012).
- Influence of an Al2O3 interlayer in a directly grown graphene-silicon Schottky junction solar cell. Carbon (2018).
- Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector. Optics Express (2016).
- Graphene photodetectors integrated with silicon and perovskite quantum dots. Microsystems & Nanoengineering (2024).
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