Nitrogen-Doped Titanium Dioxide Photocatalysis Under Visible Light

Summary

Nitrogen-doped titanium dioxide represents a major advance in semiconductor photocatalysis, extending the response of TiO₂ from the ultraviolet into the visible spectrum of sunlight. By incorporating nitrogen atoms into the TiO₂ lattice, either in interstitial or substitutional sites, new energy levels are introduced above the valence band, narrowing the effective band gap. This adjustment enables absorption of longer-wavelength photons, generating electron–hole pairs under visible illumination. Optimised doping strategies also suppress rapid charge recombination, enhance surface area and promote favourable crystal facets or heterojunction architectures. Together, these features boost the generation of reactive oxygen species or drive hydrogen evolution, with applications in water purification, air treatment and solar fuels. Recent efforts emphasise scalable synthetic routes, precise control over dopant distribution and integration into hybrid films or composites for durable, high-efficiency visible-light reactors. Despite progress, challenges remain in maximising dopant stability, minimising defect-mediated recombination and achieving reliable performance under real-world irradiation conditions.

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Nitrogen-Doped Titanium Dioxide Photocatalysis Under Visible Light publication trend

The graph below shows the total number of articles in nitrogen-doped titanium dioxide photocatalysis under visible light across all publications each year (not limited to Nature Index journals).

Technical terms

Photocatalysis: A process in which a semiconductor absorbs light to generate reactive species that drive chemical transformations.

Band gap: The energy interval between the valence band and conduction band of a semiconductor, determining the wavelengths it can absorb.

Nitrogen doping: The incorporation of nitrogen atoms into the TiO₂ lattice to create mid-gap states and reduce the effective band gap.

Interstitial doping: Insertion of dopant atoms into the voids between host lattice atoms without replacing them.

Substitutional doping: Replacement of host lattice atoms by dopant atoms at lattice sites.

Heterojunction: An interface formed between two semiconductor phases or materials with differing band structures, facilitating charge separation.

Charge carriers: Electrons and holes generated by photon absorption that migrate and participate in redox reactions.

References

  1. TiO2/PDA Multilayer Nanocomposites with Exceptionally Sharp Large-Scale Interfaces and Nitrogen Doping Gradient. ACS Applied Materials & Interfaces (2024).
  2. In Situ Driven Formation of Anatase/Brookite/Rutile Heterojunction N/TiO2 Nanocrystals as Sustainable Visible‐Light Catalysts. Global Challenges (2024).
  3. Synthesis of N-doped TiO2 nanoparticles with enhanced photocatalytic activity for 2,4-dichlorophenol degradation and H2 production. Journal of Environmental Chemical Engineering (2023).

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