Optoelectronic Properties of Gallium Chalcogenide Thin Films

Summary

Gallium chalcogenides, comprising compounds such as GaSe, Ga₂S₃ and related ternaries, exhibit a rich interplay of structural polymorphism and electronic band structures that underpin their optoelectronic performance. As layered semiconductors, these materials accommodate strong in-plane covalent bonding and weak interlayer van der Waals forces, giving rise to pronounced excitonic resonances and tunable direct bandgaps in the visible to near-infrared range. Controlled synthesis of thin films by methods such as chemical vapour deposition, electrodeposition and chemical bath deposition allows precise adjustment of thickness, crystallinity and stoichiometry. Variations in deposition parameters—temperature, precursor chemistry and substrate choice—directly influence defect densities, carrier mobility and light-matter interactions. These attributes render gallium chalcogenide thin films promising for applications in photodetectors, light-emitting devices and photovoltaic cells, where efficient charge separation, strong absorption coefficients and facile integration with existing semiconductor platforms are essential.

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Optoelectronic Properties of Gallium Chalcogenide Thin Films publication trend

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Technical terms

Chalcogenide: Compound containing a Group 16 element (sulfur, selenium or tellurium) bonded to a metal.

Bandgap: Energy difference between the valence band and conduction band that determines photon absorption threshold.

Thin film: Material layer with thickness ranging from a few nanometres up to a few micrometres.

Exciton: Coulombically bound electron–hole pair generated by photon absorption in a semiconductor.

Chemical vapour deposition: Gas-phase process that deposits solid films via chemical reactions of volatile precursors on a substrate.

References

  1. Polymorphic Ga 2 S 3 nanowires: phase-controlled growth and crystal structure calculations. Nanoscale Advances (2022).
  2. Effect of pH variation on the optoelectronic properties of electrodeposited Al2GaSe3 ternary compound semiconductor. Ceylon Journal of Science (2023).
  3. Optoelectronic Properties of Gallium Selenide (GaSe) Thin Films Solar Cells Deposited Using Chemical Bath Deposition (CBD) Technique. Aspects in Mining & Mineral Science (2023).
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