This study demonstrates that hydrogen plasma treatment effectively passivates acceptor defects and grain boundary traps in high-quality polycrystalline Ge thin films, significantly reducing hole concentration to 4 × 1014 cm−3 while maintaining high hole mobility (170 cm2 V−1 s−1). These findings represent the best combination of low carrier concentration and high mobility in polycrystalline Ge, enabling future applications in advanced semiconductor devices.
- Koki Nozawa
- Kota Igura
- Kaoru Toko
