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Ferrimagnets contain two magnetic atoms with different magnetizations, and exhibit many features of antiferromagnets, however, they still retain a net magnetic moment, like ferromagnets. Here, Hsu et al make use of this combination of ferromagnetic and antiferromagnet properties to demonstrate a diverse array of magnetic switching phenomena in ferrimagnetic GdCo thin films that have previously only been observed in antiferromagnetic/ferromagnetic bilayers.

Magnon transport is confined to a plane by sandwiching BiFeO₃ between layers of non-polar antiferromagnetic LaFeO₃, resulting in efficient magnon transport and a higher voltage output through spin–charge conversion that can be controlled using electric fields. These results have implications for electric-field-controlled spin-based memory and logic elements.

Synthesis of single-crystal complex-oxide films directly on silicon is difficult due to differing interfacial chemistry. Here, the authors demonstrate room-temperature integration of single-crystal lead zirconate titanate on to silicon to act as a gate insulator in a field-effect transistor.

Ising machines are promising for combinatorial optimization but face limitations with integer state problems. Here, authors present an FPGA-accelerated integer-based Ising framework achieving competitive accuracy over Tabucol heuristics at faster execution and scaling to problems up to 19,000 nodes.

By harnessing the way charge carriers move in a magnetic field, computing blocks based on semiconductor junctions have been made that are reconfigurable and can be interconnected to perform complex logic functions. See Letter p.72

Direct measurement of negative capacitance is now reported in a ferroelectric capacitor based on a thin, epitaxial ferroelectric PZT film.

Using a three-pronged approach — spanning field-driven negative capacitance stabilization to increase intrinsic energy storage, antiferroelectric superlattice engineering to increase total energy storage, and conformal three-dimensional deposition to increase areal energy storage density — very high electrostatic energy storage density and power density are reported in HfO₂–ZrO₂-based thin film microcapacitors integrated into silicon.

New non-volatile memory devices store information using different physical mechanisms from those employed in today's memories and could achieve substantial improvements in computing performance and energy efficiency.

Nanomagnetic logic elements that do not require a magnetic field for clocking are now fabricated.

A potential route to enhancing the performance of electronic devices is to integrate compound semiconductors, which have superior electronic properties, within silicon, which is cheap to process. These authors present a promising new concept to integrate ultrathin layers of single-crystal indium arsenide on silicon-based substrates with an epitaxial transfer method borrowed from large-area optoelectronics. With this technique, the authors fabricate thin-film transistors with excellent device performance.

A spintronic device in which the input, output and internal states are all represented by spin, and that shows the five essential characteristics necessary for logic applications, is proposed.

Multiple, small computational modules can be combined to create field-programmable gate-array-based stochastic neural network accelerators that are able to solve more complex problems than their individually trained parts.

In the standard Si transistor gate stack, replacing conventional dielectric HfO₂ with an ultrathin ferroelectric–antiferroelectric HfO₂–ZrO₂ heterostructure exhibiting the negative capacitance effect demonstrates ultrahigh capacitance without degradation in leakage and mobility, promising for ferroelectric integration into advanced logic technology.

The authors report a modulation of the magnon spin current by electric polarization reversal.

La-substitution in BiFeO₃ enables an electric field-driven conversion of a multi-domain into a single ferroelectric domain accompanied by a single variant spin cycloid. A single domain multiferroic generates 400% larger non-local inverse spin Hall voltage at the output.

Enhanced switchable ferroelectric polarization is achieved in doped hafnium oxide films grown directly onto silicon using low-temperature atomic layer deposition, even at thicknesses of just one nanometre.

Tunnelling measurements reveal the emergence of a thickness-dependent in-built potential across LaAlO₃ thin films grown on SrTiO₃ substrates. As well as being useful for developing novel LaAlO₃/SrTiO₃ devices, these observations help explain the origin of the two-dimensional electron gas that is known to arise at the interface between these two insulators.

Imaging steady-state negative capacitance in SrTiO₃/PbTiO₃ superlattices with atomic resolution provides solid microscale support for this phenomenon.

This Perspective argues that electronics is poised to enter a new era of scaling – hyper-scaling – driven by advances in beyond-Boltzmann transistors, embedded non-volatile memories, monolithic three-dimensional integration, and heterogeneous integration techniques.