Controlling defect states and impurity incorporation in oxide semiconductors is essential for enhancing thin-film transistor performance. Here, the authors reveal that hydrogen impurities act as deep-level electron traps, limiting device efficiency; by suppressing hydrogen incorporation in In–Ga–Zn oxide transistors, they achieve improved bias stability, high field-effect mobility, and superior switching speeds, advancing low-power, high-speed oxide electronics.
- Ji-Min Park
- SeongCheol Jang
- Hyun-Suk Kim
