Spin photocurrents can be efficiently generated by the resonant excitation associated with defect states in unintentionally doped GaN. Here, the authors show that shallow Si-donor states can be utilised to enhance the magnitude of the spin photocurrent, and that defect induced deep level states provide a feasible method to modulate the direction of the spin photocurrent.
- Shixiong Zhang
- Weizhi Yu
- Bo Shen
