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A conductive transparent polymer, which can function as both a conductor and an ion-storage layer, can be combined with a solid-state electrolyte to make flexible, transmissive, all-polymer electrochromic displays.
A simulation framework for three-dimensionally structured transistors based on two-dimensional materials shows that they could be used to continue complementary metal–oxide–semiconductor scaling with performance and energy enhancements.
A synthesizer that combines a fixed low-noise photonic oscillator and a direct digital synthesizer—and is based on components that can all be integrated on chip—can create microwave signals that are tunable with low noise.
Hall resistance quantization measurements in the quantum anomalous Hall effect regime on a device based on the magnetic topological insulator V-doped (Bi,Sb)2Te3 show that the system can provide a zero external magnetic field quantum standard of resistance.
Ultrathin films of gallium oxide with a dielectric constant of around 30 can be formed on the surface of molybdenum disulfide using a liquid metal-based approach and used as the gate insulator in transistors.
An intelligent headset system that uses real-time neural networks run on an embedded central processing unit can create sound bubbles that selectively isolate groups of users from outside sounds.
Niobium oxide memristors with reconfigurable dynamics can be used to make an array integrated with phototransistors that can encode image information in analogue or spiking form and can support different neural network architectures for image processing tasks.
Using a framework based on optoelectronic polarization eigenvectors and optoelectronic conversion matrixes, an on-chip full-Stokes polarimeter can be created that offers a root mean square error of less than 1% for each Stokes parameter over the entire range of polarization states at arbitrary light intensities.
Substitutionally doped two-dimensional diselenides can be used to make p-type field-effect transistors with reduced contact resistance and good electrostatic control by varying the thickness of the channel and contact regions.
A graphene spin valve that is in close proximity to the ferromagnetic van der Waals material Cr2Ge2Te6 can offer spin generation, transport and detection.
Vertical-nanowire heterojunction tunnelling transistors that are based on the broken-band GaSb/InAs system can offer a drive current of 300 µA µm−1 and a sub-60 mV dec−1 switching slope at an operating voltage of 0.3 V.
Ohmic contacts to n-type molybdenum disulfide can be created over a temperature range from millikelvins to 300 K using a window-contacted technique, which leads to evidence for fractional quantum Hall states at filling fractions of 4/5 and 2/5 in the lowest Landau levels of bilayer molybdenum disulfide devices.
Light-emitting diodes with suppressed efficiency roll-off can be created by intercalating oxygen plasma into few-layer molybdenum disulfide and tungsten disulfide.
Multiple stair-like structures can be created in parallel by programmed curing of a photoresin containing liquid metal droplets, which then stratify and assemble to form soft electronic vias.
Memristors with on/off ratios up to 108 and analogue resistive switching can be created using the intercalation/de-intercalation of silver ions in a two-dimensional metallic electrode to modulate ion migration.
A textile metamaterial sensor can wirelessly measure biomarkers—such as heart rate and respiration—in vehicles and shows no accuracy degradation when operating in moving environments.
An interfacial junction transistor based on a molybdenum disulfide/graphene heterostructure can generate tunable π-shaped and Gaussian-like membership functions, allowing membership function generators for fuzzy logic systems to be implemented with low device count and energy cost.
Tiers containing graphene-based sensors and molybdenum disulfide-based processors can be vertically stacked using a monolithic integration process, with an interconnect density of 62,500 per mm2.