Atomic Layer Deposition Techniques for Graphene Transistor Fabrication

Atomic layer deposition (ALD) provides a uniquely precise route to coat graphene channels with ultrathin, high-κ gate dielectrics essential for next-generation transistors. The inert, atomically smooth surface of graphene presents a nucleation challenge that is addressed by pre-functionalisation methods, including ozone or water pretreatments, and by the introduction of seed or nucleation layers such as ultrathin metal or metal-oxide films. Plasma-enhanced ALD variants further enhance surface reactivity, enabling conformal growth at reduced temperatures. Through careful control of precursor pulse times, purge cycles and substrate temperature, ALD yields uniform Al₂O₃, HfO₂ and other high-κ films with thicknesses down to a few atomic layers, delivering low equivalent oxide thickness and minimal leakage currents. Integration of these films into graphene field-effect transistors achieves high carrier mobility, low hysteresis and wafer-scale device uniformity. Recent advances focus on damage mitigation, vertical stacking for three-dimensional integration and flexible substrates, broadening the applicability of graphene transistors in high-frequency, low-power and flexible electronics.

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Atomic Layer Deposition Techniques for Graphene Transistor Fabrication publication trend

The graph below shows the total number of articles in atomic layer deposition techniques for graphene transistor fabrication across all publications each year (not limited to Nature Index journals).

Technical terms

Atomic Layer Deposition (ALD): A vapour-phase technique that deposits films one atomic layer at a time via sequential, self-limiting surface reactions, providing precise thickness control and conformal coverage.

Graphene Field-Effect Transistor (GFET): A transistor in which graphene serves as the channel material, with gate voltage modulating current flow between source and drain electrodes.

High-κ dielectric: An insulating material with a high relative permittivity used to achieve low gate leakage and strong electrostatic control in transistor structures.

Seed layer: A thin interfacial film applied to graphene to promote uniform nucleation during the initial ALD cycles, often composed of metals, metal oxides or self-assembled monolayers.

Equivalent Oxide Thickness (EOT): A metric expressing the capacitance of a gate dielectric in terms of the thickness of silicon dioxide that would yield the same capacitance density.

References

1. Transferrable Alumina Membranes as High‐Performance Dielectric for Flexible 2D Materials Devices. Advanced Electronic Materials (2024).
2. Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media. Nanomaterials (2023).
3. Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics. C – Journal of Carbon Research (2019).
4. Parameter Space of Atomic Layer Deposition of Ultrathin Oxides on Graphene. ACS Applied Materials & Interfaces (2016).
5. Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide. 2D Materials (2016).
6. Damage evaluation in graphene underlying atomic layer deposition dielectrics. Scientific Reports (2015).