Atomic Layer Deposition Techniques for Thin Film Applications

Atomic layer deposition (ALD) is a vapour-phase technique employing sequential, self-limiting surface reactions to build thin films with atomic-scale thickness control. By alternating exposures of gaseous precursors, ALD achieves uniform, conformal coatings even on complex three-dimensional and high-aspect-ratio substrates. Variants such as plasma-enhanced ALD, spatial ALD and hybrid molecular layer deposition broaden the range of materials and processing conditions, enabling low-temperature deposition of oxides, nitrides, sulphides and organic–inorganic hybrids. Key applications span microelectronics scaling, advanced nanopatterning, energy storage and conversion, catalysis and sensor platforms. Recent advances focus on area-selective processes, tunable nanoparticle synthesis and mechanistic understanding of precursor chemistry and film growth, driving integration into next-generation devices.

Research from Nature Portfolio

Recent studies demonstrate sub-10 nm resolution in area-selective ALD by using a two-dimensional lateral superlattice template. By exploiting precursor adsorption and diffusion on MoS₂–MoSe₂ domains, selective deposition of Al₂O₃, HfO₂, Ru and other materials is achieved without conventional masking steps, opening routes to ultra-high-density device patterning. Complementing this, dual-cycle ALD protocols have been devised to independently control platinum nanoparticle coverage and size. One cycle employs trimethyl(methylcyclopentadienyl)platinum with oxygen to set areal density, while a nitrogen-plasma cycle adjusts particle dimensions. In situ X-ray fluorescence and grazing-incidence scattering confirm angstrom-level tuning of morphology, essential for catalytic and plasmonic applications.

Atomic Layer Deposition Techniques for Thin Film Applications publication trend

The graph below shows the total number of articles in atomic layer deposition techniques for thin film applications across all publications each year (not limited to Nature Index journals).

Technical terms

Atomic layer deposition (ALD): A thin-film process using alternating, self-limiting gas–solid reactions for angstrom-level thickness control.

Self-limiting reaction: A surface reaction that proceeds until all reactive sites are consumed, preventing excess deposition.

Conformality: The degree to which a film uniformly coats complex three-dimensional topographies.

Precursor: A volatile compound introduced sequentially to react at the substrate surface and form the film.

Area-selective ALD (AS-ALD): A technique enabling deposition only on predefined regions without physical masks, by employing surface inhibitors or templates.

Growth per cycle (GPC): The average film thickness deposited in one complete sequence of precursor exposures.

References

1. Atomic layer deposition of thin films: from a chemistry perspective. International Journal of Extreme Manufacturing (2023).
2. New development of atomic layer deposition: processes, methods and applications. Science and Technology of Advanced Materials (2019).
3. Area-selective atomic layer deposition on 2D monolayer lateral superlattices. Nature Communications (2024).
4. Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition. Nature Communications (2017).
5. Molecular layer deposition of hybrid silphenylene-based dielectric film. Advanced Composites and Hybrid Materials (2023).
6. Conformality in atomic layer deposition: Current status overview of analysis and modelling. Applied Physics Reviews (2019).