Phase Shifting Techniques in CMOS and Integrated Circuit Systems

Phase shifting techniques form the backbone of modern radio-frequency (RF) and microwave signal processing in integrated circuits, enabling electronic beam steering, precise timing control and adaptive filtering across communications, radar and sensing applications. At their core, phase shifters impose a controlled delay on an electromagnetic waveform, typically realised through switched-line, reflection-type or vector-sum architectures. In complementary metal-oxide-semiconductor (CMOS) technologies, compact switch-type and all-pass networks benefit from advanced lithography and low-voltage operation, while silicon-germanium (SiGe) BiCMOS platforms combine high gain and low noise for millimetre-wave front ends. Recent advances in wide-band design have exploited L-C-L low-pass structures, varactor tuning and digital calibration loops to suppress phase error and flatten group delay. Meanwhile, gallium nitride (GaN) high-electron mobility transistor (HEMT) processes push the frontier towards Ka- and Q-band, delivering high power handling alongside fine calibration techniques. Across all platforms, the dual challenge remains to minimise insertion loss and amplitude imbalance while achieving multi-bit resolution and sub-degree phase accuracy. These developments underlie next-generation phased arrays for 5G/6G networks, low-Earth-orbit satellite gateways and radar systems, driving global connectivity and advanced remote sensing capabilities.

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Phase Shifting Techniques in CMOS and Integrated Circuit Systems publication trend

The graph below shows the total number of articles in phase shifting techniques in cmos and integrated circuit systems across all publications each year (not limited to Nature Index journals).

Technical terms

Phase shifter: Electronic circuit that imposes a controlled phase delay on an RF or microwave signal.

Vector modulator: Topology that synthesises arbitrary phase and amplitude by combining orthogonal (in-phase and quadrature) signal components.

Switched-filter phase shifter: Architecture using selectable reactive networks (inductive and capacitive) to realise discrete phase states.

Insertion loss: Power attenuation introduced by a passive or active component into a signal path, expressed in decibels.

RMS phase error: Root-mean-square measure of deviation between intended and actual phase shift over a specified bandwidth.

CMOS: Complementary metal-oxide-semiconductor technology employing paired n- and p-channel transistors for digital and RF integration.

BiCMOS: Integrated circuit process combining bipolar junction transistors with CMOS to enhance analogue, RF and digital performance.

GaN HEMT: Gallium nitride high-electron mobility transistor known for high power density, wide bandwidth and high breakdown voltage.

References

1. Compact and Digitally Controlled D-Band Vector Modulator for Next-Gen Radar Applications in 130 nm SiGe BiCMOS. IEEE Journal of Microwaves (2023).
2. Design Technique of K-Band CMOS Phase Shifter with L-C-L T-Type Low Pass Structure. Electronics (2023).
3. A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique. Sensors (2024).