Bi2O2Se is a promising 2D semiconductor with high electron mobility and native high-k dielectric layers, but its p-type doping remains challenging. Here, the authors report a low-temperature substitutional doping method to fabricate 2D Bi2O2Se p-n junctions and p-type transistors
- Yong-Jyun Wang
- Jian-Wei Zhang
- Ying-Hao Chu