Bipolar resistive switching in memristive devices is crucial for advancing non-volatile memory technologies, yet optimizing performance remains challenging. Here, the authors engineer mixed orthorhombic and hexagonal ErMnO3 polymorph films, achieving high OFF/ON resistance ratios and reduced operating voltages, with implications for efficient, low-power memory applications.
- Rong Wu
- Florian Maudet
- Catherine Dubourdieu