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Transition of superfluid to insulator is observed in the layer-imbalanced regime of bilayer magnetoexcitons.

The authors report an experimental study of the Hall effect measuring electrical quantities in ultracold fermionic quantum simulators. This provides a way forward in measuring transport properties in these platforms and verifying long-standing theoretical predictions.

Generation of orbital currents in a non-magnetic material can be useful to build efficient orbitronic devices. Now, the interplay of chiral phonons and electrons is shown to produce orbital currents in α-quartz.

Molecular bilayer crystals of an organic semiconductor can exhibit metallic charge transport down to 8 K with an electrical conductivity of up to 245 S cm⁻¹, as well as charge carrier mobility values of more than 100 cm² V⁻¹ s⁻¹ at 20 K.

The properties of electronic transport through edge states of three-dimensional quantum Hall-like states are not yet resolved. Now, increasing the surface area of the edges is shown to produce increased conductance, suggesting that chiral surface states are present.

Recent work has expanded the concept of altermagnets to non-collinear magnetic materials. Here, Hu et al extend this further to non-collinear chiral materials, determining altermagnetic multipolar order parameters and predicting that such materials host large spin-hall and Edelstein effects.

Examples of materials with non-trivial band topology in the presence of strong electron correlations are rare. Now it is shown that quantum fluctuations near a quantum phase transition can promote topological phases in a heavy-fermion compound.

Intrinsic anomalous Hall effect has been observed in twisted graphene multilayers, but these structures are typically not energetically favorable. This study extends these observations to Bernal-stacked tetralayer graphene, which is the most stable configuration of four-layer graphene.

Monolayer graphene can support the quantum Hall effect up to room temperature. Here, the authors provide evidence that graphene encapsulated in hexagonal boron nitride realizes a novel transport regime where dissipation in the quantum Hall phase is mediated predominantly by electron-phonon scattering rather than disorder scattering.

Edge current quantization in the integer quantum Hall effect is understood to arise due to noninteracting electrons circulating an incompressible insulating bulk. Here, the authors evidence compressible metal-like bulk behaviour in GaAs/AlGaAs Hall bars consistent with electronic interactions.

In three dimensions, it is possible to have more complicated spin textures, one such example is a hybrid chiral skyrmion tube, where each end of the tube has skyrmions of opposite chirality. Here, Dohi, Bhukta, Kammerbauer and coauthors find that these skyrmion tubes exhibit a non-reciprocal skyrmion Hall effect.

Berry curvature sits at the heart of both the anomalous hall effect and topological hall effect, with the former arising from a momentum space berry curvature, while the latter arises from a real space berry curvature. Here, Li et al present an intriguing example of a combined real and reciprocal space berry curvature in the kagome material Mn3Sn, resulting in a large field linear anomalous Hall effect.

Scattering in the archetypal oxide SrRuO₃ is shown to enhance orbital currents. This counter-intuitive effect establishes a transformative paradigm for energy-efficient spintronic devices.

Magnetization reversal in magnetic topological insulators drives quantum phase transitions between quantum anomalous Hall, axion insulator, and normal insulator states. Using novel analysis protocol, the authors investigate critical behaviours of these transitions and establish their electronic origin.

Whilst different models describing the two-dimensional quantum spin Hall effect exist, very few experimental systems have been realized in which to test theory. Here, the authors present a discrete trigonal lattice model for the quantum spin Hall effect and predict its realization in Au/GaAs(111).

The anomalous Hall effect is a macroscopic manifestation of a quantum mechanical effect. Here, Uelandet al. report the observation of a high Hall conductivity in the heavy-fermion compound UCu5, a metallic system, and explain its origin in terms of geometric frustration effects.

Strong correlations and topology have been seen in moiré graphene, but their optical control has not been shown yet. Now, the optical manipulation of orbital magnetism and anomalous Hall effects is demonstrated in magic-angle twisted bilayer graphene.

The origin of phonon thermal Hall Effect in a variety of insulators is elusive. Here, the authors find that black phosphorus hosts the largest thermal Hall conductivity ever reported and the Hall angle does not correlate with the phonon mean-free path.

Electron-electron interactions in many-body systems may manifest themselves through the fractional quantum Hall effect. Here, the authors perform transport measurements in bilayer graphene, and observe particle-hole symmetric fractional quantum Hall states in theN=2 Landau level.

The fractional quantum Hall effect, occurring for rational Landau-level filling factors, is commonly observed in GaAs heterostructures. Now, unusual even-denominator fractional quantum Hall states are reported for an oxide 2D electron system.

Using a system to adjust the strength of cavity vacuum fields penetrating a Hall bar, a study describes the effect of the vacuum field of a cavity on electronic correlations in quantum Hall systems.

Spin-Hall nano-oscillators are attractive for spintronics due to their high efficiency and simple layout. Here, the authors demonstrate synchronization of these oscillators to external microwave signals, opening up new possibilities for spintronic applications.

Previous work has shown that helical domain walls can form between states of different spin-polarization during a ferromagnetic spin transition in the fractional quantum Hall regime. Here, the authors study the transport through a single helical domain wall and find strong deviations from a simplified theory of weakly interacting edge channels.

Monolayer graphene in the quantum Hall regime exhibits a third-order nonlinear Hall response, which is robust against variations in magnetic field and temperature and provides insights into the interaction of chiral edge states.

Whilst superlattices containing thin films of 5d transition metal oxides are expected to yield strong interfacial coupling, only weak effects have been observed. Here, the authors report strong coupling between 3d SrMnO₃ and 5d SrIrO₃due to the interplay of strong Coulomb and spin orbit interactions.

Superlattices, with a length scale and structure that differs from the parent lattice of the host material, are well-known to allow for remarkable new electronic and magnetic properties. Here, Xie et al. synthesize Cr_1/4TaS₂, and find that it exhibits an unusual anomalous Hall effect below the Néel temperature even in stoichiometric high-quality crystals.

A study of the high-field Hall coefficient in thallium- and bismuth-based single-layer cuprates demonstrates a smooth evolution of this quantity from p to 1 + p over a wide doping range.

Fermionic currents of opposing chirality can be spatially filtered without the need for a magnetic field using the quantum geometry of topological bands in single-crystal PdGa.

A superconductor–graphene junction is shown to exhibit the quantum Hall effect, with the chemical potential of the edge state displaying a sign reversal. Such a system could provide a platform for observing isolated non-Abelian anyonic zero modes.

MnBi₂Te₄ has an appealing combination of topological bands and magnetic ordering. While chemical doping with Sb can be used to tune these properties, it typically comes with an increase in defect density. Here, Chen, Wang, Li, Duan, and coauthors demonstrate a defect engineering approach that preserves the topological and magnetic properties of Mn(Bi_1-xSb_x)₂Te₄.

The topological Hall effect is observed at above room temperature in a bilayer heterostructure composed of thulium iron garnet and platinum, suggesting the formation of skyrmions in a magnetic insulator through the interfacial Dzyaloshinskii–Moriya interaction.

Fractional quantum Hall states can be fragile, meaning that they are difficult to probe using electrical transport measurements. Now, thermal transport is shown to be a more sensitive technique for investigating these states.

Nonlinear damping enhancement imposes strict limitations on the operation and efficiency of magnetic nano-devices. Here the authors show that nonlinear damping can be controlled by the ellipticity of magnetization precession, which provides a route for the implementation of efficient active spintronic and magnonic devices driven by spin current.

The spin Hall effect induces spin currents in nonmagnetic layers, which can control the magnetization of neighbouring ferromagnets. The transparency of the interface is shown to strongly influence the efficiency of such manipulation.

While the spin generation in topological insulators is well studied, little is known about the interaction of the spins with external stimuli. Here, Seifert et al. observe a helical, bias-dependent photoconductance at the lateral edges of topological Bi₂Te₂Se platelets for perpendicular incidence of light, distinct to common longitudinal photoconductance phenomena.

Non-local transport measurements on mercury telluride quantum wells show clear signatures of the ballistic spin Hall effect. The ballistic nature of the experiment allows the observed effect to be interpreted as a direct consequence of the band structure of these semiconductor nanostructures, rather that being caused by impurity scattering.

The quantum spin Hall state is predicted to consist of two oppositely polarized spin currents travelling in opposite directions around the edges of a topological insulator. Non-local measurements of the transport in HgTe quantum wells confirm the polarized nature of these edge states.

Recently there has been interest in using the orbital Hall effect to drive the magnetization of an adjacent ferromagnet. One metal, Tantalum, has been proposed a strong source of orbital current. Here, Liu and Zhu argue that the claimed orbital torques in Tantalum arise instead from self-induced spin-orbit torques in the adjacent ferromagnet.

A martensitic alloy with a tensile strength exceeding 3 GPa and a fracture elongation of 5.13% is developed. These mechanical properties arise from interface complexes interacting with dense dislocation networks, which is a mechanism shown to be applicable to other compositions.

The effect of disorder in conventional two-dimensional electron systems is usually described in terms of individual electrons interacting with an underlying disorder potential. Scanning single-electron transistor measurements of graphene in a strong magnetic field indicate that in this system, coulombic interactions between electrons must also be taken into account.

The quasi-two-dimensional antiferromagnet Co_1/3NbS₂ was recently reported to have a significant anomalous Hall effect. However, its controversial spin configuration has presented challenges in understanding the physical mechanism behind the AHE. Here, through an array of experimental probes, Gu, Peng and coauthors verify an intrinsic k-space Berry curvature as origin of the spontaneous Hall effect, and elucidate the domain-related magnetic reversal behaviours.

The topological Hall effect usually results from a static scalar spin chirality. Here, through a combination of neutron scattering and transport measurements, Baral et al. demonstrate the emergence of a room temperature topological Hall effect due to dynamic scalar spin chirality in a topologically non-trivial phase in Fe3Ga4

This study explores fractional quantum Hall physics in large-angle twisted bilayer graphene, revealing a 1/3 fractional quantum Hall state driven by strong interlayer Coulomb interactions. Monte Carlo simulations confirm unique topological ground states and transitions with applied displacement fields.

Large-effect variants in autism remain elusive. Here, the authors use long-read sequencing to assemble phased genomes for 189 individuals, identifying pathogenic variants in TBL1XR1, MECP2, and SYNGAP1, plus nine candidate structural variants missed by short-read methods.

Ohmic contacts to n-type molybdenum disulfide can be created over a temperature range from millikelvins to 300 K using a window-contacted technique, which leads to evidence for fractional quantum Hall states at filling fractions of 4/5 and 2/5 in the lowest Landau levels of bilayer molybdenum disulfide devices.

The anomalous Hall angle parameter tanθ^A can be formulated as a function of the product of electrical resistivity and anomalous Hall conductivity, a scheme that allows the anomalous Hall angle in the magnetic Weyl semimetal Co₃Sn₂S₂ to be increased to 25°.

Interwoven magnetic and non-magnetic layers in TbTi₃Bi₄ overcome kagome frustration, producing coupled elliptical-spiral magnetic and spin-density-wave orders and a very large anomalous Hall effect driven by strong electron–magnetic field interactions.