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Transition of superfluid to insulator is observed in the layer-imbalanced regime of bilayer magnetoexcitons.

Three-dimensional topological insulators are materials that are nonmagnetic insulators in the bulk but exhibit metallic surface states. Yoshimi et al, now identify a signature of such two-dimensional states, the quantum Hall effect, in bismuth-based chalcogenide topological insulators.

Bilayer graphene is known to host states where interactions dominate the electronic behaviour. Now, transport measurements show that this is also true for trilayer graphene and give evidence for ferroelectric states and states with high Chern number.

The transport properties of materials with topologically non-trivial band structures may be manipulated by an applied magnetic field or by magnetic doping. Here, the authors demonstrate quantum Hall states for temperatures up to 2 K in thin film bilayers comprising pristine and Cr-doped topological insulators.

Skyrmions, when driven by any applied force, experience an addition sideways motion known as the skyrmion hall effect. Here, Brearton et al. present a reciprocal space method for determining the strength of the skyrmion hall effect, making measurement possible for skyrmion lattices.

A study of the high-field Hall coefficient in thallium- and bismuth-based single-layer cuprates demonstrates a smooth evolution of this quantity from p to 1 + p over a wide doping range.

Unidirectional spin-hall magnetoresistance is a change in the conductivity of ferromagnetic/heavy metal bilayers that is sensitive to the magnetisation of the ferromagnetic layer. This sensitivity makes it a potential candidate for magnetic state readout. Here, Salikhov et al demonstrate ultrafast unidirectional spin hall magnetoresistance driven by terahertz fields

Whilst superlattices containing thin films of 5d transition metal oxides are expected to yield strong interfacial coupling, only weak effects have been observed. Here, the authors report strong coupling between 3d SrMnO₃ and 5d SrIrO₃due to the interplay of strong Coulomb and spin orbit interactions.

The anomalous Hall effect is a macroscopic manifestation of a quantum mechanical effect. Here, Uelandet al. report the observation of a high Hall conductivity in the heavy-fermion compound UCu5, a metallic system, and explain its origin in terms of geometric frustration effects.

A magnetoresistance effect that occurs in a platinum layer deposited on a magnon junction consisting of two insulating magnetic yttrium iron garnet layers separated by an antiferromagnetic nickel oxide spacer layer could be used to create spintronic and magnonic devices that are free from Joule heating.

One of the many exotic characteristics of systems that exhibit the fractional quantum Hall effect is the presence of chiral edge modes that carry energy but no net charge. Gurman et al.demonstrate the use of quantum dots to transform this energy into a measurable current, enabling them to better probe these modes.

Conduction in ferroelectric domain walls is now an established phenomenon, yet fundamental aspects of transport physics remain elusive. Here, Campbellet al. report the type, density and mobility of carriers in conducting domain walls in ytterbium manganite using nanoscale Hall effect measurements.

The anomalous Hall effect has been observed in high-quality epitaxial thin films of non-collinear antiferromagnet Mn₃Pt, and can be switched on and off using an electric field.

Spin–orbit torques could enable a new generation of low-power electrically controlled memory devices. Here, the authors experimentally disentangle the spin-Hall effect and inverse spin-galvanic effect contributions to the relativistic spin torques in a room temperature Fe/(Ga,Mn)As bilayer.

The topological Hall effect usually results from a static scalar spin chirality. Here, through a combination of neutron scattering and transport measurements, Baral et al. demonstrate the emergence of a room temperature topological Hall effect due to dynamic scalar spin chirality in a topologically non-trivial phase in Fe3Ga4

Graphene on boron nitride gives rise to a moiré superlattice displaying the Hofstadter butterfly: a fractal dependence of energy bands on external magnetic fields. Now, by means of capacitance spectroscopy, further aspects of this system are revealed—most notably, suppression of quantum Hall antiferromagnetism at particular commensurate magnetic fluxes.

The spins in quantum magnets couple to each other through an exchange interaction. Here, the authors show that a weak coupling between neighbouring spins called the Dzyaloshinskii–Moriya interaction can give rise to topological behaviour in the archetypal quantum magnet strontium copper borate.

2D transition metal ditellurides exhibit nontrivial topological phases, but the controlled bottom-up synthesis of these materials is still challenging. Here, the authors report the layer-by-layer growth of large-area bilayer and trilayer 1T’ MoTe2 films, showing thickness-dependent ferroelectricity and nonlinear Hall effect.

Hybrid perovskites exhibit long carrier diffusion lengths and lifetimes. Here, Chen et al. show experimentally that carrier recombination in perovskites is far from Langevin and closer to the best direct-bandgap semiconductors, which can be explained by the dipolar polaronic nature of charge carriers.

Large-effect variants in autism remain elusive. Here, the authors use long-read sequencing to assemble phased genomes for 189 individuals, identifying pathogenic variants in TBL1XR1, MECP2, and SYNGAP1, plus nine candidate structural variants missed by short-read methods.

We show that domain walls in minimally twisted bilayer graphene support exceptionally robust proximity superconductivity in the quantum Hall regime.

Polycrystalline thin films of elemental bismuth exhibit a room-temperature nonlinear transverse voltage due to geometric effects of surface electrons that is tunable and can be extended to efficient high-harmonic generation at terahertz frequencies.

Large-area graphene devices synthesized by chemical vapour deposition are used to develop electrical resistance standards, based on the quantum Hall effect, with state-of-the-art accuracy and under an extended range of experimental conditions of magnetic field, temperature and current.

EGFR inhibitors are standard of care in patients with EGFR-mutant non-small cell lung cancer (NSCLC) but resistance often develops. Here the authors report that the evolution of EGFR inhibitor resistance in EGFR-mutant NSCLC results in a sensitivity to the compound, MCB-613, and investigate the underlying mechanism of action.

The quantum Hall effect in GaAs-based devices defines resistance standards accurate to within one part in 10⁻⁹ at magnetic fields close to 10 T. Here, Lafont et al. demonstrate such accuracies over an extended magnetic field range at 1.4 K in chemically vapour-deposited graphene on silicon carbide.

By combining satellite observations with ground-based data and expert validation, this analysis demonstrates considerable misestimation of grassland extent and thereby carbon stock estimates in previous global assessments based on remote sensing.

Magnetic imaging reveals that a transport current flows in the interior of Cr-(Bi,Sb)₂Te₃ samples within the quantum anomalous Hall regime, contrary to the common assumption of current flow along the sample edge.

Mechanisms for generating spin-polarized currents may be helpful for applications. Now one such mechanism that uses the unusual Landau-level spectrum of WSe₂ under a strong magnetic field is demonstrated.

Through inelastic light scattering chiral spin-2 long-wavelength magnetorotons are observed, revealing chiral graviton modes in fractional quantum Hall states and aiding in understanding the quantum metric impacts in topological correlated systems.

The challenges in reliably reproducing the quantum anomalous Hall effect have emerged as a major bottleneck for MnBi₂Te₄. Here, the authors develop a fabrication method to address this, paving the way for the fabrication of high-quality dissipationless topological transport devices.

Interfacing graphene with an antiferromagnetic insulator CrOCl enables the observation of strong interfacial coupling in the quantum Hall regime.

Valley dependent spin polarization called spin-valley locking appears in absence of magnetism but it is limited to rare examples of transition metal dichalcogenides. Here, the authors report evidence of spin-valley locking and stacked quantum Hall effect in a bulk Dirac semimetal BaMnSb₂.

Two dimensional electron gas (2DEG) at oxide interfaces is promising in modern electronic devices. Here, Wadehra et al. realize 2DEG at a novel interface composed of LaVO₃ and KTaO₃, where strong spin-orbit coupling and relativistic nature of the electrons in the 2DEG, leading to anisotropic magnetoresistance and planar Hall effect.

Bilayer graphene states are observed at anomalously small magnetic fields and show magnetic hysteresis, providing evidence for a quantum anomalous Hall effect driven by orbital magnetism.

An interferometer device demonstrates the interference of fractional quantum Hall effect edge states. This is a big step towards braiding non-Abelian anyons.

Charge-neutral graphene in the quantum Hall regime is known to be an insulator. Now thermal transport measurements show that it also does not conduct heat. This sheds light on the nature of the ground state in this regime.

Conductance quantization is the hallmark of non-interacting confined systems. The authors show that the quantization in graphene nanoconstrictions with low edge disorder is suppressed in the quantum Hall regime. This is explained by the addition of new conductance channels due to electrostatic screening.

Previous measurements of interferometers based on quantum Hall (QH) edge channels have suggested potential electron pairing effects. Here, the authors investigate the coupling between QH edge channels in graphene Aharonov-Bohm (AB) interferometers, proposing a possible single-particle explanation for the apparent interference phase jumps and AB frequency doubling.

New functionalities of two-dimensional topological insulators (2DTI) are of current scientific interest. Here, the authors show that topological protection can be lifted by pairwise coupling of 2DTI bismuthene edges in close proximity.

A single-cell epigenomic atlas of human immune cells highlights cell-type-specific features associated with genetic or environmental exposures.

This study demonstrates a low-energy photon device based on the kagome metal RbV₃Sb₅. It demonstrates that Fermi surface reconstruction, driven by a phase transition, leads to the emergence of van Hove singularities near the Fermi level.

Artificial corrugations in bilayer graphene can produce a nonlinear anomalous Hall effect that originates from the Berry curvature dipole and a linear Hall effect that originates from a warped Rashba-like valley–orbit coupled band dispersion.

In electrostatically-gapped bilayer graphene, topologically-protected states can emerge at naturally occurring stacking domain walls even in the absence of a magnetic field. Here, the authors describe the interplay between such domain wall states and quantum Hall edge transport within the eight-fold degenerate zeroth Landau level of suspended bilayer graphene.

The broken-symmetry edge states that are the hallmark of the quantum Hall effect in graphene have eluded spatial measurements. Here, the authors spatially map the quantum Hall broken-symmetry edge states using atomic force microscopy and show a gapped ground state proceeding from the bulk through to the quantum Hall edge boundary.

The spontaneous topological Hall effect, combining non-coplanar antiferromagnetic order with finite scalar spin chirality in the absence of a magnetic field, is now experimentally demonstrated for the triangular lattice compounds CoTa₃S₆ and CoNb₃S₆.

A 3D quantum Hall effect has been reported in Dirac semimetal ZrTe₅ due to a magnetic-field-driven Fermi surface instability. Here, the authors show evidence of quasi-quantized Hall response without Fermi surface instability, but they argue that it is due to the interplay of the intrinsic properties of ZrTe₅ electronic structure and Dirac semi-metallic character.

The Weyl semimetal Co\(_{3}\)Sn\(_{2}\)S\(_{2}\) exhibits a combination of magnetic ordering with a large anomalous Hall effect. Lachman et al. find an intrinsic exchange bias of this anomalous Hall effect and attribute it to the coexistence of ferromagnetism and spin glass behaviour.

The kagome magnet Co₃Sn₂S₂ has complex magnetic behaviour and a topological band structure that yields a large anomalous Hall effect. Guguchia et al. find phase separation between ferro- and anti-ferromagnetic orders and that the volume-wise competition controls the anomalous Hall conductivity