Zhang et al. report a foundry-compatible γ-ray treatment to induce chemical bond changes of organic contaminants in carbon nanotube transistors, mitigating the imperfections at the carbon nanotube/dielectric interface, reducing the off-state current density to 112.2 pA μm-1, and achieving radiation tolerance up to 100 Mrad(Si).
- Ke Zhang
- Ningfei Gao
- Weisheng Zhao