Nanotechnology articles for Xidian University, China

Time frame: 1 June 2025 - 30 May 2026

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Count: 34

Article ‘Count’ for Nanotechnology.

Journal Count Share
1 0.73
Negative Quantum Capacitance-Driven Photonic Synapse with Ultralow Energy Consumption and Year-Scale Retention 0.73
5 1.60
Artificial Neuromorphic Synapse Based on MoS2/h-BN/CrOCl/Graphene for Non-Volatile Memory in Visual Recognition Applications 0.08
Multi-Terminal Operability in Van Der Waals Ferroelectric Field-Effect Memtransistors for Logic-in-Memory and Neuromorphic Computing 0.50
Artificial Synapses and Logic Gates Based on Tellurium Oxide Memristors for Artificial Vision Applications 0.91
The Reverse Diode Behavior, Negative Photoconductivity Effect and Carrier Transport Mechanisms in PbZrO3 Antiferroelectric Memristor for Neuromorphic Computing 0.09
Dual-Mode Switching of Photodetection and Neuromorphic Photoelectric Memory in VS-ReS2/WSe2 Heterostructure via Vacancy and Electric Field Synergetic Regulation 0.02
1 0.14
Electromechanical modeling and experimental validation of an origami-structured triboelectric vibration energy harvester 0.14
20 15.01
Enhanced resistive switching performance via air-stable FA3Sb2I9 thin films for flexible and multilevel memory applications 0.05
A 2.7 kV AlGaN/GaN high electron mobility transistor with an anti-parallel low turn-on voltage GaN Schottky barrier diode 1.00
Improved RF power performance in GaN-on-SiC HEMTs through thermal design of the GaN buffer layer 0.90
Investigation of AlN back barrier/GaN HEMTs with ultra-thin GaN channel for high-frequency and high-voltage applications 0.92
High-performance Ku-band thin-barrier AlGaN/GaN MIS-HEMTs on Si using high-stress LPCVD-SiN passivation for low-voltage applications 0.80
Modulation of Fe doping tail for high CW power handling and OIP3 in HEMT-based RF switches compatible with PA co-integration 1.00
Investigation on the mechanism of stability variation with gate–drain bias in AlGaN/GaN-on-Si HEMTs 1.00
Varistructure resistive switching memory devices through dynamical redox of oxides 1.00
Investigation of anomalous positive bias temperature instability in GaN MIS-HEMTs with PEALD SiNx gate dielectrics 0.13
Tailoring of thermal conductance across two-dimensional MoS2 and polymer interface by self-assembled monolayer 0.10
Establishment and modulation of linear VTH model with low interface states using atomic layer etching for E-mode GaN-based P-MOSFETs for digital logic application 1.00
Investigation of the γ-irradiation-induced degradation mechanism of p-channel p-GaN/u-GaN/AlGaN MESFETs 1.00
Trap-suppressed channel temperature measurement and thermal resistance characterization model for GaN HEMTs 0.87
Gate leakage mechanisms caused by 60Co gamma irradiation on p-GaN gate AlGaN/GaN HEMTs 0.79
High performance vertically integrated double barrier AlN memristive nonvolatile resistive random-access memory 0.93
A phase jump phenomenon within the beat signal for dynamic target measurement in frequency-sweeping interferometry 0.45
Impact of a thin AlN buffer layer on the characteristics of GaN high electron mobility transistors on a silicon substrate 1.00
10 kV E-mode GaN HEMT: Physics for breakdown voltage upscaling 0.07
Enhancement of resistive switching properties in RRAM with AlN-Al2O3 bilayer structure 1.00
Double-channel AlGaN/GaN Schottky barrier diode with AlN super back barrier on SiC substrate 1.00
4 1.55
High-power-density energy harvester via optimized negative Poisson’s ratio metastructure with nonlinear gradient wall thickness 0.09
Experiment-driven electromechanical coupling optimization of a pendulum-based electromagnetic energy harvester with a compact variable transmission ratio mechanism 0.33
A three-phase constant voltage soft contact TENG that utilizes the gyroscopic effect to collect wave energy 0.13
Simulation of magnetic energy harvesters using an improved synchronous electronic charging extraction circuit 1.00
1 1.00
Self-Powered Halide Perovskite Optoelectronic Synaptic Memristors for Reconfigurable Logic and Reservoir Computing Applications 1.00
1 0.50
High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy 0.50
1 0.65
Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices 0.65

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