While excitonic semiconductors offer appealing optical properties, their application for competitive optoelectronic devices has remained limited. Here, the authors report the realization of broadband exciton-polariton photodiodes based on a layered excitonic semiconductor, WS2, contacted by tin-doped indium oxide in an open optical cavity design, showing ~MHz bandwidth at room temperature.
- Qixiao Zhao
- Adam D. Alfieri
- Weida Hu