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Strain effects on n-type doping in AlN
|
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GaN quasi-vertical p–i–n diode with polarized bevel termination by sidewall passivation
|
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Probing the transitions between 2D and 3D states in InGaN/GaN quantum wells via admittance spectroscopy
|
|
Impact of cavity tuning on lasing characteristics for GaN-based vertical-cavity surface-emitting lasers
|
|
Enhanced thermo-optic tuning micro-ring resonator on silicon nitride platform
|
|
Terahertz-wave generation via difference-frequency mixing from resonant above-barrier states in weakly strained InGaAs/GaAs multiple quantum wells
|
|
Red emission enhancement via strong coupling between photonic–plasmonic band states in InGaN/GaN honeycomb nanocolumn plasmonic crystals
|
|
Enhanced stimulated four-wave mixing in a bipartite silicon resonator for phase mismatch switching
|
|
Simulation of gain characteristics in AlGaN quantum wells under impact of inhomogeneous band broadening
|
|
A light-switchable polarity retina-inspired phototransistor for adaptive photo-sensing
|
|
Nanoscale crystallization of Cr2Ge2Te6 thin films induced by terahertz near-fields
|
|
On-chip FSR manipulation of optical frequency combs with a four-wave mixing time lens
|
|
Stabilizing direct laser acceleration with long-scale-length plasma targets
|
|
Comparative study of aging-induced optical and electrical degradation and dynamic stability in GaN-on-sapphire and GaN-on-GaN micro-LEDs
|
|
Electrically pumped AlGaN edge-emitting UV-B laser diodes grown by molecular beam epitaxy
|
|
Mg diffusion modulation strategy for high-voltage etched-and-regrown GaN p–n junctions
|
|
Bandwidth enhancement in hexagonal M-plane InGaN/GaN MQW micro-photodetectors via TMAH sidewall treatment
|
|
Impact of scandium substitution on the second-order nonlinearity of epitaxial aluminum nitride thin films
|
|
Power scaling and wavelength tuning of 3.5 m Er-doped fluoride fiber laser in a broadband-feedback cavity
|
|
Near-ultraviolet resonant-cavity light-emitting diode grown on Si
|
|
Luminescence mechanism of prismatic stacking faults in homoepitaxial AlN
|
|
Inverse design epsilon-near-zero-based broadband nonreciprocal thermal emitter using hybrid deep learning framework
|
|
Direct red-detuned soliton generation via lower-power auxiliary laser assistance
|
|
Stress-induced efficiency degradation mechanism of InGaN-based red micro-LEDs depending on their size
|
|
AlxGa1−xN (0.7 < x < 1) Schottky diodes using distributed polarization doped layer with a current density of 14 kA/cm2
|
|
Frequency-modulated enhancement of microwave resonator sensing
|
|
Ultrafast and broadband all-optical switching in ZnO via Ga-defect modulation
|
|
Spatio-time-resolved cathodoluminescence study on the midgap recombination lifetimes of nanowire-based InGaN/GaN multiple quantum shells
|
|
Topology-preserving multilevel tuning of a quasi-BIC vortex microlaser with phase-change Sb2S3 metasurfaces
|
|
Stress and doping analysis of low n-doped GaN layers on various substrates by micro-Raman mapping
|
|
Phase-matched cascaded Brillouin lasers via single-frequency intracavity Raman pumping
|
|
Gravity-driven gradient engineering of room-temperature perovskite thin films for spectral and photodetection applications
|
|
High-power narrow-linewidth low-noise semiconductor laser via carrier–photon dynamic feedback
|
|
Narrow-linewidth diode laser using a dual-VBG external cavity feedback structure with polarization beam-splitting technology
|
|
Low-temperature plasma-enhanced ALD of c-axis textured GaN on sapphire
|
|
Fabry–Pérot resonance cavity enabling highly polarization-sensitive long-wave infrared detector via double-layer linear grating
|
|
Site-selective enhancement of Eu emission in delta-doped GaN
|
|
Attosecond MeV γ-ray pulse compression via radiation-lifetime shortening in a longitudinal magnetic field
|
|
Kinetics of indium adlayer and droplet on InGaN surface and their roles in InGaN growth
|
|
Stimulated emission and optical gain in II–VI semiconductor ZnCdSe/ZnCdMgSe multiple quantum well heterostructures
|
|
Measuring laser chirp rate at single-emitter excitation energies
|
|
Direct nanoscale characterization of polarization-dependent diffusion in non-polar GaN via scanning diffusion microscopy
|
|
In situ XRD study of strain evolution in AlGaN/GaN HEMT at high temperatures up to 1000 °C
|
|
Modified spectral encoding for single-shot broadband terahertz detection based on cross-polarized wave
|
|
Preferential formation of highly efficient Eu luminescent centers in Eu-doped GaN grown on semipolar (202¯1) GaN
|
|
Deep ultraviolet photodetector based on high-quality cubic-AlN single-crystal films with nitrogen vacancies
|
|
High mobility quaternary AlGaScN/GaN heterostructures grown by metalorganic chemical vapor deposition
|
|
Selenium-containing amino acid passivated deep-red perovskite quantum dot light-emitting diodes
|
|
Electrical control of polarization-resolved photodetection in GeSe/MoTe2 heterostructures for optoelectronic encryption
|
|
Stabilization of Rydberg dissipative time crystals using a scanning Fabry–Pérot interferometer transfer lock
|
|
Nonlinear guided exciton-polaritons in a van der Waals layered waveguide
|
|
Nonlinear absorption transition governed by exciton and defect states in 2D (PEA)2PbI4 from visible to near-infrared
|
|
Low-damage p-GaN surface for Ohmic contact after passivation layer removal by atomic layer etching
|
|
Sub-3 V monolithic integration of GaN-based micro-LEDs with p-MOSFETs
|
|
High-resolution broadband characterization of resonance dispersion in an optical microresonator
|
|
Revealing trace water effect on the structural and optical evolutions of blue CsPbBr3 perovskite quantum dots Available
|
|
Reduction of carbon impurities in GaN grown by MOCVD using an NH3-plasma source
|
|
Enhanced visible-light manipulation of the ferromagnetism in 3D cobalt nanosphere by sphere size engineering
|
|
AlScN as an electron blocking layer in blue light emitting diodes: A first look
|
|
GaN HEMT with improved electrical performance enabled by hybrid AlN nucleation layers
|
|
amp;gt;95% TM-polarized 780 nm diode laser enabled by GA–NN co-optimization of quantum states and optical states
|
|
High-mobility AlGaN/GaN heterostructures directly grown on diamond (111) substrates using a high-temperature physical-vapor-deposition AlN nucleation layer
|
|
Reduced dark current InAs/GaAs quantum dot photodetectors on Si(001) via spatially separated co-doping
|
|
Electrically injected InGaN/GaN micro-light emitting diodes: Size-dependent diode characteristics and recombination dynamics
|
|
Self-powered broadband photodetector with intelligent sensing based on a mixed-dimensional TiS3/WSe2 van der Waals heterojunction
|
|
Ultrahigh-Q chalcogenide micro-racetrack resonators
|
|
High power and feedback-resilient single-state operation in an InAs/GaAs quantum dot laser
|
|
2D–3D heterointerface regulation of van der Waals epitaxy of AlN on graphene for wafer-scale exfoliation
|
|
Low-resistance graded AlGaN contact to high Al-content AlGaN PolFET grown by ammonia molecular beam epitaxy
|
|
High-mobility nitrogen-polar GaN/AlGaN heterostructures via impurity modulation
|
|
Wafer-scale epitaxial growth of AlN (0001) on heteroepitaxial diamond (111)
|
|
High-performance nonlinear photodetector based on MoTe2/CdS/ReS2 dual heterojunction for polarization-visible light imaging
|
|
GHz ultrahigh-order harmonic laser output based on nonlinear multimode interference
|
|
Unveiling distinct defect state and wavelength dependent saturation absorption enhancement mechanism in Bi1.3In0.7Se3 alloy
|
|
A field-deployable compact gravimeter based on a grating magneto-optical trap with Gal-level long-term stability
|
|
High-order harmonics generation in MoS2 nanosheets in the presence of CdSe and CdSe/V2O5 quantum dots
|
|
Achieving high-efficiency, long-wavelength, and high-uniformity InGaN red micro-LEDs through polarization effect and stress engineering of the AlGaN capping layer
|
|
Negative differential photoresistance for optically tunable resonator in a 2D Nb3I8 tunnel junction
|
|
Ligand-stripping approach to modulate carrier transport in a bilayer structure achieving charge balance for efficient and stable quantum dot light-emitting diodes
|
|
Coherent ultraviolet light generation in widegap wurtzite ZnMgO thin films through frequency conversion
|
|
Ultralow contact resistance of 0.058Ωmm achieved by pulsed sputtering deposition of regrown degenerately doped GaN contacts for AlGaN/GaN high-electron-mobility transistors
|
|
Fast and sensitive visible–infrared detection using Bi2O2Se/WS2 heterostructure
|
|
Significantly enhanced infrared second harmonic generation in 1T-phase Janus PdXY (X, Y = S, Se, Te) monolayers
|
|
Linewidth broadening factor and relative intensity noise of interband cascade lasers grown on InAs substrate
|
|
Near-field coherent and focused free-electron radiation based on ordered structures with functional units
|
|
Capillary-assisted self-assembly of glass microspheres for simple and versatile fabrication of voltage-tunable two-dimensional liquid crystal gratings
|
|
Phononic combs in lithium niobate acoustic resonators
|
|
Advanced micropillar cavities: Room-temperature operation of microlasers
|
|
Shubnikov–de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
|
|
Inverse design of terahertz amplitude modulator using tandem deep neural networks
|
|
Surface contact doping effect of Si on AlGaN/GaN heterojunction
|
|
Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
|
|
Highly efficient pixelated quantum-dot light-emitting diodes enabled by bi-color-converting cavities
|
|
Ionization energy of the oxygen donor in AlN
|
|
Study of beryllium acceptor states in aluminum nitride via cathodoluminescence analysis
|
|
Shortwave frequency-hopping reception via a Rydberg atom-based electrically small antenna
|
|
High-current, high-voltage AlN p–n junction diodes enabled by compositional grading
|
|
Red micro-LEDs on glass substrates for ultrahigh-luminance (>105 nits) transparent displays
|
|
Shallow trap dynamics and non-thermal spectral shift in sub-10-μm InGaN micro-LEDs
|
|
Room-temperature continuous-wave lasing at 318 nm on a relaxed AlGaN template grown on a sapphire substrate
|
|
Quantum structure for efficient p-doping of AlGaN with Al content over 70%
|
|
Chiral-sensitive frequency mixing in valley-excited two-dimensional semiconductors
|
|
Transferrable van der Waals epitaxy of AlN on h-BN for flexible vacuum ultraviolet photodetection
|
|
Resolving carrier concentration of n-type AlN/GaN nanowires by scanning spreading resistance microscopy
|
|
Terahertz spectroscopy with compact apochromatic metasurface optics
|
|
Elimination of wing tilt in laterally overgrown GaN.
|
|
Terahertz-driven nanotip field-emission electron gun and cascaded acceleration
|
|
Miniaturized atomic fountain clock
|
|
High hole mobility in AlN from negative crystal-field splitting
|
|
Formation and optical characteristics of AlGaN:Tb/GaN core–shell nanowires grown by organometallic vapor phase epitaxy
|
|
Indium bilayer mediated InGaN surface decomposition: A comprehensive phenomenological model of epitaxial kinetic mechanisms
|
|
Controlling two-dimensional electron gas density through surface states in ultra-thin-barrier AlGaN/GaN heterostructures
|
|
Strain-induced polarization of AlN/GaN heterointerfaces enabling ultra-high 2DEG densities
|
|
The study of thermal fluctuations in microwave and mechanical resonators
|
|
Avalanche durability of high-voltage GaN p–n diodes with tunnel junctions as anode contacts
|
|
Terahertz single-pixel video based on a matrix-addressable infrared vertical-cavity surface-emitting laser array
|
|
Optimal detuning in optically pumped 10λ ultraviolet vertical-cavity surface-emitting lasers for temperature stability and low threshold
|
|
On the origin of carrier loss in Mg-doped N-polar GaN
|
|
(S+C)-band optical amplification enabled by hybrid lanthanide-doped nanocomposites
|
|
Tetrachromatic optoelectronic transistor with multi-dimensional information processing functionality for in-sensor motion perception
|
|
THz intraband absorption in HgTe nanocrystals in the linear and nonlinear regimes
|
|
Disorder-induced electron localization and electronic states coupling in nitride semiconductors
|
|
A perspective on inelastic light scattering spectroscopy for probing transport of collective acoustic excitations
|
|
Defect passivation by short-chain ligands in all-solution-processed inverted ZnSeTe green QLEDs
|
|
Revisiting the epitaxial Si3N4 crystalline cap on AlGaN/GaN via evolutionary structure search
|
|
Low-stress MOCVD-grown 15 𝛍 m GaN layers on 200 mm engineered substrates with minimal wafer bow
|
|
Low-temperature high-quality epitaxial AlN films deposited by plasma-enhanced atomic layer deposition
|
|
Semi-suspended graphene terahertz photothermoelectric detector
|
|
Electric field-modulated AlGaN/GaN Schottky barrier diode with high breakdown voltage via polarized charge around thin GaN channel
|
|
Widely tunable cavity-enhanced backward difference-frequency generation
|
|
1T′-MoTe2 as an integrated saturable absorber for photonic machine learning
|
|
Impact of graded doping transition layer on structural properties of Zr-doped AlN epilayers
|
|
Quantification and improvement of doping uniformity on CVD grown 4H-SiC superjunction structures
|
|
Effects of lamella preparation on InGaN quantum well luminescence
|
|
Over 50% carrier injection efficiency in AlGaN-based UV-B laser diodes enabled by combining Al-content-drop design and low-temperature epitaxy
|
|
Optical nonlinearity of heavily doped n-type germanium epitaxial films in mid-infrared region
|
|
Wide-angle photon collection in deep-ultraviolet photodetectors via metalens integration
|
|
Effect of the active-layer growth temperature on optical gain and lasing threshold power density in AlGaN-based UV-B lasers
|
|
Origin of the efficiency drop in far-UVC LEDs emitting between 218 and 238 nm
|
|
Innovative concave SiGe/Ge microdisk directly on Si substrates
|
|
On chip digital-to-analog converters for ultrafast signals using spintronic terahertz emitters
|
|
Tracing fabricated defects with ultrafast photocarrier dynamics in undoped GaN films
|
|
Research on energy compensation characteristics of beam deflection structure based on liquid crystal polarization grating
|
|
Low p-contact resistance InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates
|
|
Optimal generation of soft x-ray high harmonics through free adjustment of laser parameters: A comparison of three commonly used atoms
|
|
Watt-level widely tunable near-infrared all-fiber femtosecond laser
|
|
Enhanced photodetection performance enabled by an out-of-plane built-in electric field
|
|
Structural and optical properties of 100 mm AlN bulk single crystals
|
|
Demonstration of direct-amplification enabled harmonic generation in an ultraviolet free-electron laser
|
|
Guided mode slot resonators
|
|
Investigation on fabrication and physical mechanisms of single-contact AC-driven nano-LED devices
|
|
Enhanced transport properties in GaN heterostructures with sputter-epitaxy-grown ScAlN barriers via thermal annealing
|
|
Spectral-filtering-induced phase transition in passively mode-locked fiber lasers
|
|
Performance enhancement of GaN-based VCSELs by composition-graded structures
|
|
Ratio-induced competition between energy and charge transfer in InP/ZnS quantum dots: A color-converting and high-performance LED
|
|
Processing and characterization of N-polar GaN/AlGaN HFETs grown on 200 mm sapphire substrates
|
|
Strain-driven anisotropic SHG and Raman responses in NbOBr2
|
|
Improving electrical properties of metal–semiconductor contact on Al-rich n-AlGaN by multi-step annealing
|
|
Temperature-dependent Raman spectroscopic studies of AlN epi-films by metal-organic chemical vapor deposition
|
|
2.5 W GaSb-based VECSEL at 2062.4 nm with an absolute wavelength stability below 1 MHz
|
|
Synergistic dual-polarization-photogated AlGaN heterojunction phototransistor for ultrafast solar-blind ultraviolet detection
|
|
Controllable synthesis of wafer-scale two-dimensional PdTe2/PdSe2 vertical heterostructure with broadband nonlinear optical response
|
|
Broadband 2-μm superluminescent diodes with GaSb-based variable-thickness quantum wells
|
|
Diffusing the photon-assisted regenerated holes to increase the WPE for 259 nm AlGaN-based DUV LEDs with three-dimensional n-ZnO/p-AlGaN photon-sensitive micro-structure arrays
|
|
Reduction of hole traps in GaN MOS structures by high-pressure oxygen annealing
|
|
An imaging radar using a Rydberg atom receiver
|
|
Observation of microscopic damage in nanomaterials using laser-accelerated proton beams
|
|
Surface treatments affect GaN surface quantum well emission
|
|
Determination of the dependence of long-lived hot-carrier temperature on excitation power and its effect on the radiative decay rate in GaN/InGaN nanodisks
|
|
Edge-coupled digital alloy AlInAsSb SPAD with high avalanche breakdown probability
|
|
Type-I band offset between diamond and n-type Al Ga oxynitride: Possible diamond-based heterojunction for high-power and high-frequency electronic devices
|
|
Extended wavelength photodiodes in the B-III–V material system
|
|
Self-aligned implanted mesa termination enables a high BFOM of 1.64 GW/cm2 and non-edge junction breakdown for vertical GaN SBDs
|
|
Observation of anti-Stokes-fluorescence cooling in commercial Yb-doped silica fibers
|
|
The impact of laser and growth rate on trap formation in conventional and laser-assisted MOCVD GaN
|
|
A dibenzothiophene-based cross-linked hole transport material for high-performance blue quantum dot light emitting diodes
|
|
High-performance self-powered MoS1.2Se0.8 lateral homojunction photodetector with broadband spectrum response
|
|
Mid-infrared GaSb-based SAM APD with hole-initiated multiplication
|
|
Multichannel visible light communication and sensing system over a single optical path
|
|
Remote sensing of airborne thermoacoustic signals induced by radiofrequency excitation in biological tissue, saline, and steel
|
|
Room-temperature broadband THz detection at zero bias in layered WSe2
|
|
Selective area regrowth of silane-doped GaN achieving record carrier density for ultra-low resistive Ohmic contacts for AlGaN/GaN HEM
|
|
Proximal light field control in red InGaN Micro-LEDs via evolution-algorithm-designed multilayer stacks
|
|
Post-fabrication tuning of circular Bragg grating resonators via atomic layer deposition
|
|
Percolation-driven bandgap narrowing and magnetic ordering in Ni++-implanted GaN
|
|
Tunable and broadband hybrid comb based on electro-optic modulated mode-locked laser
|
|
Efficient laser–electron interaction via perfect vortex beam
|
|
Variable wavelength-multiplexed dual-comb generation and spectroscopic measurement by a free-running all-normal-dispersion Yb-doped fiber laser
|
|
Transport properties of lattice-matched AlScN/GaN single- and multichannel heterostructures
|
|
Deep-level point defects at Ga sites in dilute AlxGa1−xN alloys
|
|
Effect of strain-induced defects in GaN channel on two-dimensional carrier transport in AlGaN/GaN heterostructures
|
|
III-nitride thin film liftoff using electrochemical etching
|
|
Effect of indium embedding on molecular-beam epitaxial growth of Pb1−xSnxTe
|
|
Pronounced visible luminescence in GaN by high-temperature anion implantation
|
|
Multi-order optical differentiator integrated with an omnidirectionally selective subtracter
|
|
Plasma-driven temporal collimation of sheet electron beam
|
|
Low-threshold lasing in cholesteric liquid crystals enabled by asymmetric defect layer positioning
|
|
Synergistic optimization of material innovation and interface engineering for COD mitigation in high-power GaN-based blue laser diodes
|
|
Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p++-GaN/p-GaN/AlGaN/GaN platform
|
|
Inversion of the internal electric field using delta doping in Al0.3Ga0.7N/GaN heterostructures
|
|
Strong coupling enables high-efficiency sum-frequency generation in a DBR-based lithium niobate waveguide
|
|
Electron mobility in AlN from first principles
|
|
High-performance GaN-based green laser diodes with low thermal degradation via hybrid MOCVD-MBE growth
|
|
In situ nitrogen doping of β-Ga2O3 during MOCVD homoepitaxy: A theoretical and experimental study
|
|
Ultralow level all-optical self-switching empowered by merging bound states in the continuum
|
|
SiN interlayer to improve external quantum efficiency and reduce sidewall recombination for blue (micro) light-emitting diodes
|
|
All-optical tuning of cascaded Raman lasing in silica microsphere
|
|
Removal of Si impurities from GaN regrowth interfaces using XeF2
|
|
Influence of hole trapping on the electroluminescence of Cu-In-Zn-S quantum dots
|
|
Meta-waveguide-based computed tomography for terahertz super-resolution imaging
|
|
Chirality inversion for tailoring light generation in nonlinear van der Waals metasurfaces
|
|
Electric field-induced self-assembly of multiferroic core-shell nanocrystals in anisotropic liquid crystal medium
|
|
Sub-100 Ω/□ sheet resistance of GaN HEMT with ScAlN barrier
|
|
Coexistence of temperature-robust band edge lasers and random lasers for high-quality, speckle-free imaging
|
|
Ultrasensitive polarization-dependent ultraviolet detection enabled by electrical and optical anisotropies
|
|
Widely tunable short-wave mid-infrared hybrid lasers enabled by a single ultra-compact silicon microring resonator
|
|
Efficient and stable CsPbBr3 perovskite quantum dots by dodecyl dimethyl betaine ligand toward light-emitting diode
|
|
Electronic properties of extended surface defects in homoepitaxial GaN diodes
|
|
Thin-channel AlGaN/GaN/AlN double heterostructure HEMTs on AlN substrates via hot-wall MOCVD
|
|
Structure of the very first atomic layer of Ga oxide on GaN at GaN oxidation front
|
|
Enhanced terahertz metasurface biosensor with reduced substrate effect for trace detection of lung cancer cells
|
|
Velocity-field measurements in a GaN/AlN two-dimensional hole gas
|
|
Thermal-noise limits to the frequency stability of burned spectral holes
|
|
DC and power-frequency electric field measurement with Rydberg-atom interferometry
|
|
Reduction in surface defects on red-emitting InGaN quantum wells by using vicinal GaN (0001) surfaces
|
|
High-order harmonic generation and nonlinear chirality based on accidental bound states in the continuum
|
|
Improving light extraction efficiency by p-orbital tuning in multifaceted AlGaN multiple quantum wells
|
|
Investigation of ultrathin surface passivation layers for GaN: A comparative analysis of Al2O3, SiO2, and SiNx in reducing surface recombination
|
|
Structural and electrical properties of MOCVD-grown scandium nitride thin films on sapphire, Si, GaN, and SiC
|
|
Plasmon-enhanced photoluminescence of single upconversion nanoparticles site-selectively captured between gold nanorods
|
|
Thin absorber AlInAsSb 2-μm SACM APDs with very low and tunable dark currents at room-temperature
|
|
Determination of AlP/GaP band offset considering conduction-band non-parabolicity of GaP and change in exciton-binding energies
|
|
Superresolution THz pulsed solid immersion microscopy
|
|
Epitaxial strain reconfiguration of AlGaN multiple heterojunctions for high-responsivity high-speed UV detection
|
|
Nanoscopic structural and emission properties of red InGaN hybrid single quantum wells
|
|
A magneto-optically pumped cesium beam clock using monochromatic light
|
|
Efficiency cliff in scaling InGaN light-emitting diodes down to submicron
|
|
Microwave dynamics of gated Al/InAs superconducting nanowires
|
|
Electron transport in N-polar AlGaN:Si films grown by MOVPE on annealed and sputtered AlN templates
|
|
Improving electron mobility in InAs quantum wells on GaAs by removing bunched surface steps generated in strain relaxation
|
|
Lowering electron injection barrier via stepwise transport layer for high-performance blue inverted ZnSeTe QLEDs
|
|
CPT chip-scale atomic clock with direct-modulation chip-external cavity diode laser
|
|
Fast recovery dynamics of GaSbBi-based SESAMs for high-fluence operation
|
|
Computationally designing a dual-aspheric compound lens toward multi-depth endomicroscopy imaging
|
|
Semipolar (11 2¯ 2) AlN/AlGaN quasi-vertical Schottky barrier diodes grown on m-sapphire
|
|
Room temperature low-loss etchless alumina ridge waveguides fabricated by pulsed laser deposition and lift-off
|
|
Unveiling and eliminating the parasitic hole loss in AlGaN-based deep-ultraviolet light-emitting diodes
|
|
Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs
|
|
Efficiency droop contributors in InGaN green light emitting diodes
|
|
Utilization of silicon optical coatings for transverse-mode suppression in high-power oxide-confined vertical-cavity surface-emitting lasers
|
|
Carbon in GaN as a nonradiative recombination center
|
|
Enhancement of second harmonic generation in two-dimensional monolayer materials empowered by merging BICs of photonic crystals
|
|
AlN-based polarization-doped field-effect transistors with downward-graded AlGaN underlayers
|
|
Tunable metamaterial with quantitatively switchable anapole modes via quasi-BIC using two methods
|
|
Shubnikov–de Haas oscillations of 2DEGs in coherently strained AlN/GaN/AlN heterostructures on bulk AlN substrates
|
|
Controlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures
|
|
Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy
|
|
Optical identification and anti-counterfeiting based on plasmonic core–shell nanoparticles with Fano resonance
|
|
Enhancement of high-harmonic generation from 2D materials by distributed Bragg reflector
|
|
Submicron ultraviolet single-mode microlaser enabled by electrical pumping
|
|
Interface quality improvement of metal/AlOxNy/AlGaN/GaN MIS-heterojunction by using alternative AlOxNy growth in PEALD system
|
|
Strain engineering of vertical (110) InGaAs/InP quantum wells laterally grown on (001) SOI
|
|
Sub-micron aperture VCSEL demonstrates ultralow ITH = 0.05 mA and energy/bit = 45.5 fJ/bit at 3 Kelvin
|
