|
All-optical bidirectional synaptic plasticity based on an IGZO voltage-divider architecture for neuromorphic visual perception
|
1.00 |
|
Synergistic chlorophyll-derived polymer/NiOx hybrid electrodes for enhanced-performance biobased supercapacitors
|
0.75 |
|
Enhancement-mode GaN p-FET with p-NiO/p-GaN heterojunction gate featuring improved threshold voltage stability and channel conductivity based on low interface trap density
|
1.00 |
|
Visible light-driven photoelectric synaptic transistors based on Ga2O3/IGZO heterostructure for neuromorphic computing
|
1.00 |
|
Achieving an ultra-thin GaN channel layer in AlGaN/GaN/AlN high electron mobility transistors
|
1.00 |
|
Multifunctional triboelectric nanogenerator based on SCASN:Eu phosphor for integrated energy harvesting and photoelectric conversion
|
0.86 |
|
Strain-driven topological phase transition between anomalous valley Hall and quantum anomalous Hall states in hexagonal ferromagnets
|
1.00 |
|
Resistive switching performance and mechanisms in Sb-doped perovskite-poly(9-vinylcarbazole) composite memristors
|
1.00 |
|
Large orbital torque with concurrent mitigation of magnetic damping in titanium/rare-earth lutetium metallic heterostructures
|
1.00 |
|
Controllable multimodal switching in TaOx-based RRAM through Ar/O2 sputtering ratio and stacking sequence regulation
|
1.00 |
|
Monolayer WSe2 films synthesized by confined-space chemical vapor deposition
|
1.00 |
|
Evolution of boron nitride structures from hexagonal to cubic and wurtzite phases: A machine-learning potential approach
|
1.00 |
|
Electron drift velocity measurement of AlGaN/GaN single- and multi-channel Fin structures
|
1.00 |
|
Multifunctional Janus TiSBr monolayer: Strain-tuned synergy of ferrovalley, quantum anomalous Hall, and anomalous Nernst effects
|
0.83 |
|
Hardware edge detection system based on a self-assembled vertically aligned ferroelectric memristor
|
1.00 |
|
Ferroelectric switchable magnon valley and nonlinear Hall effect in type-I multiferroics
|
1.00 |
|
Digitally programmable kirigami metamaterials via magnetic encoding
|
1.00 |
|
Time-domain electrical heating for broad-range and anisotropic thermophysical characterization of semiconductors
|
1.00 |
|
Foaming-induced structural engineering of graphite arrays for high-density thermal pathways in thermal interface materials
|
1.00 |
|
Effective modulation of emission dynamics in Er:CaF2 crystal via oxygen anion engineering
|
1.00 |
|
Remote epitaxial growth of single-crystal cesium tin bromide perovskite on germanium substrates
|
1.00 |
|
Sub-100-nm multistate spin–orbit torque magnetic tunnel junction enabled by local perpendicular anisotropy gradient
|
1.00 |
|
Ultra-small-angle nonreciprocal thermal radiation via bound states in the continuum-driven topological phase singularity pairs without magneto-optical dielectrics
|
1.00 |
|
Ion irradiation defect engineering modulates thermal transport in MoS2/Si heterostructure
|
0.83 |
|
Valence equivalence guided high-throughput search for stable monolayer MA2Z4 and M2A2Z4
|
1.00 |
|
Mechanism of point-defect-driven evolution in ferroelectricity of AlScN films
|
1.00 |
|
Excitation-dependent multi-color emission in lead-free double perovskites with Er3+–Yb3+ cross relaxation for information encryption
|
1.00 |
|
Wafer-scale dry transfer of graphene via thermally removable Sb2O3 sacrificial layer
|
1.00 |
|
Impact of bond rupture dynamics at polar and non-polar interfaces on time-dependent dielectric breakdown (TDDB) of GaN FinFETs
|
1.00 |
|
Ultraflexible and stretchable multifunctional synaptic memristor by molecular layer deposition
|
1.00 |
|
ZnCdSe/ZnS quantum dot hybrid film organic optoelectronic synaptic transistor for high-efficiency neuromorphic computing
|
1.00 |
|
Characteristics of transport properties in double-barrier AlGaN/GaN HEMT with ultra-high density 2DEG and high breakdown voltage
|
1.00 |
|
Improved uniformity of nanoscale phase change material pitch line for high-density data storage
|
1.00 |
|
Transient extension process of the off-state depletion region in GaN HEMTs with SiO2 passivation
|
1.00 |
|
Investigation of the RF performance degradation in GaN HEMTs associated with the kink effect
|
1.00 |
|
Wavelike thermal phonons revealed by localization in graphene phononic crystals
|
0.75 |
|
High-performance logic circuits based on Ag/ZnAl2O4/FTO resistive random-access memory devices
|
1.00 |
|
Effect of Al2O3 capping layer on the crystallization behavior of optical Sb2S3 films
|
1.00 |
|
Bilayer oxide memristor based on IGZO/IAZO structure for artificial tactile perception system
|
1.00 |
|
Nonlinear refractive index compensation enables accurate spectral shifting in varactor-driven plasmonic waveguides
|
1.00 |
|
Improved RF power performance in GaN-on-SiC HEMTs through thermal design of the GaN buffer layer
|
1.00 |
|
A 2.7 kV AlGaN/GaN high electron mobility transistor with an anti-parallel low turn-on voltage GaN Schottky barrier diode
|
1.00 |
|
Robust Vth stability in normally off GaN HEMTs with a stacked p+/p−-NiO gate: Suppression of interface trapping and electric-field crowding
|
1.00 |
|
Versatile far- and near-field polarization generation using self-complementary metasurface
|
0.30 |
|
On-chip electrically reconfigurable diffractive element and metalens with phase change material
|
1.00 |
|
Optoelectronic synapse based on a BiI3/Bi2Se3 van der Waals heterostructure for neuromorphic visions
|
1.00 |
|
Dual-function Sb2S3/HfO2 memristor for reservoir computing and neural network learning via decoupled short- and long-term memory
|
1.00 |
|
Latent transition unlocks visible-to-ultraviolet upconversion for covert optical security
|
0.86 |
|
Investigation of AlN back barrier/GaN HEMTs with ultra-thin GaN channel for high-frequency and high-voltage applications
|
1.00 |
|
Batch-fabricated PDMS templates for the robotic transfer of 2D materials
|
1.00 |
|
Enhanced pseudocapacitance rectification by doping metalloid phosphorus in high entropy oxide (CrMnFeCoNi)3O4
|
1.00 |
|
The nonreciprocal transmission of magneto-acoustic waves in Ni81Fe19/Cu/Co40Fe40B20 magnetic bilayer
|
1.00 |
|
Ferroelectric control of the layer-polarized anomalous Hall effect in a 2D TiClAsH bilayer via superposition engineering
|
1.00 |
|
Fully optical switching memory based on an oxidized GQD–FeOx heterojunction with 106 negative photoconductance ratio
|
1.00 |
|
A fast-switching threshold memristor based on AlN/Ag/AlN stacked device for mental disorder electroencephalogram recognition
|
1.00 |
|
Opposite thermal conductivity trends in graphene and silicene driven by distinct interlayer coupling mechanisms
|
1.00 |
|
Tunable small-angle nonreciprocal radiation and broadband absorption in a GST–Weyl semimetal resonant structure
|
0.69 |
|
Aggregation modulation of conjugated polymers by carbon dots for optoelectronic synaptic transistors and artificial visual recognition
|
1.00 |
|
Strain-enabled polarity reversal of transport in Bi/MoS2 van der Waals heterostructures
|
1.00 |
|
Wafer-scale growth of highly textured TiTe2/Ge2Sb2Te5 heterostructure thin films
|
0.80 |
|
Anomalous dynamic on-resistance instability mechanisms of p-GaN gate AlGaN/GaN HEMTs under power cycling tests
|
1.00 |
|
First observations of avalanche-like behavior in p-GaN gate HEMTs with the buffer avalanche triggered layer
|
1.00 |
|
Optoelectronic synaptic devices based on TMD alloys for image memory and processing
|
1.00 |
|
Three-terminal memcapacitive synapses based on a thin H-TiO2 layer
|
1.00 |
|
Enhanced ferroelectric endurance in ScAlN by interfacial oxide reconstruction
|
1.00 |
|
Unveiling the role of grain boundaries in driving in-plane conductive filament formation in MoS2 neuromorphic devices
|
1.00 |
|
Nanoscale thermal effect induced in situ Cu-based memristor
|
0.90 |
|
Dynamic magnetoelectric effect in multiferroic DyCrO4
|
1.00 |
|
Design and performance study of high-efficiency self-powered photodetectors based on ZnO/X2CO2 (X = Zr, Hf) heterojunctions
|
1.00 |
|
High-performance Ku-band thin-barrier AlGaN/GaN MIS-HEMTs on Si using high-stress LPCVD-SiN passivation for low-voltage applications
|
1.00 |
|
Achieving analog and digital resistive switching for quasi-2D perovskite memristors by compositional regulation and crystalline manipulation
|
1.00 |
|
Effect of doping on the ferroelectric properties of wurtzite Al1−xYxN
|
1.00 |
|
3.89-kV AlGaN/GaN Schottky barrier diodes on silicon substrate with BaTiO3 field plate termination
|
1.00 |
|
Pressure-controlled growth and mechanism of monolayer WSe2 via NaCl-assisted CVD
|
1.00 |
|
An incremental strategy for tunable anisotropic piezoelectricity in 2D materials
|
1.00 |
|
Engineering neuromorphic phase-change memory: Carbon-doped GeSbTe with high thermal stability and low resistance drift
|
0.91 |
|
Interlayer interaction controllable multiple anomalous Hall effect in bilayer Janus structures
|
1.00 |
|
Enhanced conductance linearity in HfS2-based optoelectronic memristors via a defective h-BN interlayer for high-performance neuromorphic visual system
|
1.00 |
|
Modulation of Fe doping tail for high CW power handling and OIP3 in HEMT-based RF switches compatible with PA co-integration
|
1.00 |
|
Controllable intrinsic defect-induced electronic structure modulation in few-layer pentagonal PdPS
|
1.00 |
|
MOF-derived graphene/chromium oxide hybrids via laser processing for enhanced planar micro-supercapacitors
|
1.00 |
|
Polarization-controlled multistate thermal conductivity in ferroelectric HfO2 thin films
|
1.00 |
|
Varistructure resistive switching memory devices through dynamical redox of oxides
|
1.00 |
|
Trap-induced degradation mechanisms in quasi-vertical GaN PiN diodes under the combined effects of high-energy heavy ion irradiation and off-state reverse bias
|
1.00 |
|
Bidirectional optically modulated In2O3 transistors with inorganic solid electrolyte gating for neuromorphic visual systems
|
1.00 |
|
Investigation on the mechanism of stability variation with gate–drain bias in AlGaN/GaN-on-Si HEMTs
|
1.00 |
|
Single-crystal PMN-PT gated ferroelectric field-effect transistor for artificial visual application
|
1.00 |
|
Evolution of polarization switching kinetics in an Al0.8Sc0.2N ferroelectric film with electric field cycling
|
1.00 |
|
Microscopic origin of metal–insulator transition in two-dimensional Bi2O2Se unraveled by first-principles simulations
|
1.00 |
|
Uncovering enhanced ferroelectricity: Substituent-driven design of wurtzite ZnO materials
|
0.89 |
|
Controlled synthesis of large-area monolayer Janus MoSSe nanostructures based on interface strain-induced strategy
|
1.00 |
|
Ferroelectric-gated highly sensitive InGaAs nanowire near-infrared photodetectors
|
1.00 |
|
Thermal and microwave performance enhancement of AlGaN/GaN HEMT using an ultra-thin buffer on Si substrate for handset applications
|
1.00 |
|
Transition metal oxide-based heterostructure memristors for nonvolatile ternary resistive switching realization
|
1.00 |
|
Optimization of electric field distribution for AlGaN/GaN MIS-HEMT with thick i-GaN cap layer
|
1.00 |
|
Tri-terminal IGZO optoelectronic synapse with photoelectric co-modulation for neuromorphic computing
|
1.00 |
|
Valley manipulation in 2D multiferroic TiInSe3: Doping-induced valley polarization and stacking-engineered effects
|
1.00 |
|
High-entropy negative thermal expansion oxide with thermally enhanced upconversion luminescence
|
0.75 |
|
Gradient-segmented flag triboelectric nanogenerator for omnidirectional wind sensing and self-powered warning
|
1.00 |
|
Tuning magnetocaloric effect of monolayer via flexomagnetism
|
0.93 |
|
Electro-optically co-modulated ZnS synaptic memristor for neuromorphic recognition systems
|
1.00 |
|
Lowering Cr3+-dimer excited states via In3+-mediated crystal field weakening in spinel: A route to long-wavelength broadband NIR luminescence
|
1.00 |
|
Nonvolatile bidirectional photoresponse in a fully CMOS-compatible FeFET for in-sensor computing
|
1.00 |
|
Atmospheric neutron irradiation effects on conductance update linearity of Mg:HfOx (9 at. %)-based memristive synapse
|
1.00 |
|
Low-power flexible MXene-based resistive random access memory by oxygen plasma
|
1.00 |
|
Improved electrical performance of LiNbO3 domain wall memories after thinning of interfacial layers at low temperatures
|
1.00 |
|
Plasmon-enhanced Sb2Te3/FTO heterojunction optoelectronic synapses for image compression encoding and high-accuracy recognition
|
1.00 |
|
Modulating the carrier transport at 2D semiconductor/high-k oxide interfaces with 2D hBN interfacial layers
|
1.00 |
|
Toward stable gate-controlled GaSb nanowires near-infrared photodetection and photocommunication
|
1.00 |
|
A threshold memristor based on self-assembled vertically aligned nanocomposite SrTiO3:Eu2O3 film for simulating biological pain receptors and LIF neurons
|
1.00 |
|
Ferrovalleytricity in 2D multiferroic lattice with self-doped valley carriers
|
1.00 |
|
Optically tunable synaptic transistors based on AlGaN/GaN heterostructure for neuromorphic vision processing
|
0.92 |
|
High-performance BST:MgO memristor with optoelectronic synaptic plasticity for bio-inspired visual memory
|
1.00 |
|
Magnetically enhanced quasi-zero-stiffness galloping harvester for efficient wind energy harvesting and autonomous sensing
|
1.00 |
|
0D/1D mixed-dimensional heterojunction synaptic transistor for visual information processing
|
1.00 |
|
Tailoring of thermal conductance across two-dimensional MoS2 and polymer interface by self-assembled monolayer
|
1.00 |
|
Investigation of anomalous positive bias temperature instability in GaN MIS-HEMTs with PEALD SiNx gate dielectrics
|
1.00 |
|
Superior rectification self-rectifying memristors with self-recovery capabilities enabled by GaOx/InOx heterostructures
|
1.00 |
|
Unraveling the four-phonon scattering mechanism in the exceptional thermal conductivity of TTH-carbon
|
1.00 |
|
Optimal layer thickness and junction temperature of GaN HEMTs based on bias-dependent non-uniform heat source model
|
1.00 |
|
Optimal growth conditions for strained GaAs/InxAl1−xAs core–shell nanowires with enhanced electronic properties
|
0.05 |
|
Laser-induced surface restructuring of carbon dots enables tunable multicolor photoluminescence via microcavity confinement
|
1.00 |
|
Ferroelectric tunnel junction based on ultrathin Zr0.75Hf0.25O2
|
1.00 |
|
Establishment and modulation of linear VTH model with low interface states using atomic layer etching for E-mode GaN-based P-MOSFETs for digital logic application
|
1.00 |
|
Revealing the size dependence on point field emitter emission beam through continuous work function and atomic precise electric field
|
1.00 |
|
Investigation of the γ-irradiation-induced degradation mechanism of p-channel p-GaN/u-GaN/AlGaN MESFETs
|
1.00 |
|
Low-loss GaN monolithic bidirectional switch via antiparallel connected HEMTs with recessed Schottky drain
|
1.00 |
|
High-photosensitivity optoelectronic synaptic transistors based on triple-cation perovskite for neuromorphic vision system
|
0.86 |
|
Crystal orientation dependence of extreme near-field heat transfer between polar materials governed by surface phonon modes
|
1.00 |
|
Molecular beam epitaxy of In-assisted ScAlN/GaN HEMT structures with ultralow sheet resistance
|
1.00 |
|
Nonvolatile regulation of room-temperature electronic properties of Cr:In2O3 thin films by ferroelectric polarization charge and light illumination
|
1.00 |
|
Optical phonon-driven modulation of interlayer thermal transport in stacked diamane
|
1.00 |
|
Two-dimensional metals thickness scaling effect on electrical contact in metal–semiconductor junctions: Carrier transport and ultrafast dynamics study
|
1.00 |
|
Polarization-enhanced conductivity in enhancement-mode GaN p-FET
|
1.00 |
|
Ultralow lattice thermal conductivity and glass-like thermal transport induced by double stacking faults in monolayer MS2 (M = Mo, W)
|
1.00 |
|
Enhanced resistance switching ratio of Hf0.5Zr0.5O2-based film through reducing oxygen vacancy concentration
|
1.00 |
|
Nonmonotonic phonon thermal conductivity modulated by electron–phonon interaction in graphene/h-BN heterostructures
|
1.00 |
|
Interfacial synergy of micro-/nanoscale triboelectric materials for efficient triboelectric nanogenerators
|
1.00 |
|
High-speed and multi-level AlScN ferroelectric memristor on CMOS-compatible tungsten for electronic synapses
|
1.00 |
|
Stable high-temperature operation of E/D-mode tri-gate AlGaN/GaN MIS-HEMTs with digital recess technique for monolithic integration
|
0.48 |
|
Development of the self-aligned top-gate MoS2 transistor with the recorded radiation tolerance
|
1.00 |
|
Strain-driven interfacial engineering in metal–MoS2 contacts
|
0.25 |
|
Thermal boundary resistance measurement of GaN/Al2O3 interfaces based on heat source thermometry separation integrated chip
|
1.00 |
|
Enhanced reliability of Hf0.5Zr0.5O2 ferroelectric memory through WOx buffer layer to minimize oxygen vacancies
|
1.00 |
|
Gate leakage mechanisms caused by 60Co gamma irradiation on p-GaN gate AlGaN/GaN HEMTs
|
1.00 |
|
Al3+ doping-induced proton spatial inversion symmetry breaking in two-dimensional vermiculite: Intrinsic polarization and ferroelectric switching
|
1.00 |
|
Performance enhancement in NbO2/HfO2 bilayer threshold switching memristor as an oscillatory neuron
|
1.00 |
|
Lattice dynamics of piezoelectric response of 2D Janus Y2Se2IF under strain
|
1.00 |
|
Trap-suppressed channel temperature measurement and thermal resistance characterization model for GaN HEMTs
|
1.00 |
|
High performance vertically integrated double barrier AlN memristive nonvolatile resistive random-access memory
|
1.00 |
|
Programming optimization for alleviating relaxation effect in RRAM high-resistance state
|
1.00 |
|
MXene-tailored CNT cold cathodes and self-powered electron emitters toward plasma generation
|
1.00 |
|
Impact of process control on electrical breakdown characteristics of quasi-one-dimensional ZrTe3 interconnects
|
1.00 |
|
Molecular beam epitaxy and electronic structures of rare-earth selenide EuSe thin films
|
1.00 |
|
Two-terminal Li+-based memristors with synchronous conductance modulation of Li-source/Li-reservoir layer for high-accurate image recognition
|
1.00 |
|
Dual-polarization metalens with dynamically reconfigurable focal position in three dimensions based on the Moiré effect
|
1.00 |
|
Suppressing endurance degradation in lead-free perovskite Cs3Bi2Br9 memristors: Grain engineering via annealing temperature and grain boundary passivation with PEG additive
|
1.00 |
|
Controlled filament stability in SrTiO3 memristors via swift Xe ion irradiation
|
1.00 |
|
Continuously tunable uniaxial strain engineering of two-dimensional materials under scanning probe microscopy
|
1.00 |
|
Cu-doped poly(1,8-diaminonaphthalene) enables high-rate and long-cycle stability for quasi-solid-state supercapacitors
|
1.00 |
|
A phase jump phenomenon within the beat signal for dynamic target measurement in frequency-sweeping interferometry
|
0.91 |
|
Robust low-temperature ferroelectric behavior of Al0.75Sc0.25N films
|
1.00 |
|
Controlled synthesis of large-area MoS2/MoO2 heterostructure via one-step, two-stage chemical vapor deposition for electrocatalytic hydrogen evolution reaction
|
1.00 |
|
Observation of three types of NDR in flexible VOx Mott memristors
|
1.00 |
|
Enhanced altermagnetic splitting through modulating altermagnetic-ferroelectric coupling in monolayer multiferroic Ti2S2O
|
1.00 |
|
Endogenic ion–electron coupling effect in rGO–Fe2O3 heterostructure for optoelectronic neuromorphic memcapacitor
|
0.89 |
|
Pulsed mode atomic layer etching of ScAlN using Cl2/C2H4/Ar
|
1.00 |
|
Synaptic plasticity simulates behavior of low-voltage solution-processed Ag-doped CuI thin film transistors
|
1.00 |
|
Defect-dominated resistive switching of 2D MoTe2 nanosheets for artificial synapses and decimal arithmetic
|
1.00 |
|
Nanoscale p–n junctions based on conductive domain walls in lithium niobate films on insulators
|
1.00 |
|
Enhanced performance of normally-off AlGaN/GaN MOS-HEMTs taking advantage of extreme-k BaTiO3 with prominent dielectric polarization
|
1.00 |
|
Carbon-atom-chain-based spin filters
|
1.00 |
|
Self-powered broadband photodetection and bias-tunable infrared optoelectronic synapses: Dual-functional device based on asymmetric Schottky contact Au/WSe2/1T'-MoTe2 heterojunction
|
1.00 |
|
Aluminum: A qualified material for Tamm plasmon polariton in visible band
|
1.00 |
|
Impact of a thin AlN buffer layer on the characteristics of GaN high electron mobility transistors on a silicon substrate
|
1.00 |
|
Low-voltage driven I–V hysteresis loop in Ag/SrTiO3/Si heterostructure
|
1.00 |
|
Low leakage fully-vertical GaN-on-Si power MOSFETs
|
1.00 |
|
10 kV E-mode GaN HEMT: Physics for breakdown voltage upscaling
|
0.36 |
|
Self-rectifying memristors based on epitaxial AlScN for neuromorphic computing
|
1.00 |
|
Regulating anisotropy in 2H-MoTe2/CrOCl heterojunction with hysteresis effect
|
1.00 |
|
TaOx-based bifunctional memristor for compact leaky integrate-and-fire neuron
|
1.00 |
|
Compact backward effective spoof surface plasmon polaritons (BESSPPs) for high-performance millimeter-wave application
|
1.00 |
|
Passive metasurface gyrators combining chiral and gyromagnetic effects
|
1.00 |
|
Impedance-dependent degradation in GaN HEMTs under high-voltage RF stress: Electro-thermal and trap mechanisms
|
1.00 |
|
Ferroelectric polarization-driven ionic modulation enabling enhanced self-rectification in NiOx/HfO2−x: Al memristors
|
1.00 |
|
Optoelectronic memristive sensor with reconfigurable logic operation capability in ZnO/Nb:SrTiO3 heterojunction
|
1.00 |
|
Terahertz multi-foci metalens with polarization-dependent/independent focal points and reconfigurable imaging
|
1.00 |
|
Unveiling charge-trapping storage capacity in MoS2/BiFeO3 heterostructure
|
1.00 |
|
Enhancing vibration isolation and energy harvesting via a quasi-zero stiffness electromagnetic system
|
0.80 |
|
Deep learning-based molecular dynamics simulation reconfiguration of efficient heat energy transport of Gra/h-BN heterointerface
|
0.83 |
|
AlN-based unipolar memristors with symmetrical Al electrodes: Preparation, characterization, and test
|
1.00 |
|
Effects of defects in graphene on molecular beam epitaxy of CdTe on graphene/Ge
|
1.00 |
|
An organic optoelectronic synaptic transistor for image preprocessing
|
0.94 |
|
Enhancement of resistive switching properties in RRAM with AlN-Al2O3 bilayer structure
|
1.00 |
|
Valley polarization and anomalous valley Hall effect in altermagnet Ti2Se2S with multipiezo properties
|
1.00 |
|
Enhancement of long-term memory of IGZO synaptic transistors by the introduction of an Al2O3 charge trapping layer
|
1.00 |
|
Enhanced field emission properties of graphene composite films by introducing graphene oxide
|
1.00 |
|
Angle-independent coupling between topological interface states and Tamm states in photonic crystal heterostructures with hyperbolic metamaterials
|
1.00 |
|
GaN cap impacts on gate leakage mechanisms in AlGaN/GaN high-electron mobility transistors
|
1.00 |
|
Giant super-Nernstian potentiometric response of InN quantum dots on self-formed core–shell InGaN nanowires
|
1.00 |
|
Low-voltage transistor array with dynamic synaptic plasticity for neuromorphic computing
|
1.00 |
|
Ferroelectric control of antiferromagnetism via coordination swapping in A2Mo3O8 (A = Mn, Fe, Co)
|
1.00 |
|
Anomalous valley Hall effect in two-dimensional p-orbital honeycomb lattice
|
1.00 |
|
The effects of vacancies and strain on the magnetism of tellurene
|
1.00 |
|
A non-invasive dry-transfer method for fabricating mesoscopic devices on sensitive materials
|
1.00 |
|
A multi-modal bidirectional galloping energy harvester with mode transition for alternating wind directions
|
1.00 |
|
Double-channel AlGaN/GaN Schottky barrier diode with AlN super back barrier on SiC substrate
|
1.00 |
|
Sodium dopant in pectin mediates ionic-electronic coupling on Na0.67Mg0.28Mn0.72O2 for electrolyte-type artificial synapse with tunable plasticity
|
1.00 |
|
Phase zonal reconstruction via differential metasurface
|
1.00 |
|
Twist angle dependence of flatbands in trilayer graphene: A first-principles study
|
0.50 |
|
Dielectric breakdown of atmospheric-pressure grown hexagonal boron nitride single crystals
|
1.00 |
|
Diameter scaling limit of catalytic silicon nanowires confined by optimized ultrafine sidewall grooves
|
1.00 |
|
Stable GaN nanoscale air channel array with ultralow-operated voltage and enhanced output current
|
1.00 |
|
Resonant dynamics governed by interlayer frozen bubbles in h-BN/graphene heterostructures
|
1.00 |
|
Low-power optoelectronic synaptic devices with ZnMgO in deep-ultraviolet encryption computation
|
1.00 |
|
Effect of hydrogen on electrical properties and defects of AlGaN/GaN HEMTs
|
1.00 |
|
The impact of defect evolution on the electrical performance of AlGaN/GaN HEMT after 14-MeV neutron irradiation
|
1.00 |
|
Transparent multifunctional memristor based on amorphous InAlZnO for biomimetic sensing system
|
1.00 |
|
Oxygen plasma and post-annealing assisted surface oxidation for high-Vth E-mode p-GaN HEMTs
|
1.00 |
|
Artificial synapses based on CIPS/Te vdW heterojunction ferroelectric transistor for traffic light recognition
|
1.00 |
|
Tunable spin-valley states in collinear-antiferromagnetic Janus Re2X3Y3 (X, Y I, Br, Cl; X ≠ Y) monolayers
|
1.00 |
|
Silicon-based van der Waals heteroepitaxy of PbSe with room-temperature sensitive mid-infrared response
|
1.00 |
|
Demonstration of a GaN-based P-channel FinFET with high current density based on multi-channel structure
|
1.00 |
|
Anomalously dominating four-phonon scattering in pressure-dependent thermal transport in beryllium oxide
|
0.75 |
|
Dynamic tuning of surface lattice resonances via mechano-optical coupling in flexible nanoring metasurfaces
|
0.13 |
|
Continuous zoom metalens based on the polarization state of light source in the ultraviolet band
|
1.00 |
|
Thermal transport and accommodation coefficient at the air–MoS2 interface
|
0.88 |
|
MoS2-based transistor with asymmetric Schottky contacts for self-powered broadband photodetection and visual synapse
|
1.00 |
|
Dynamic modulation of dual-band nonreciprocal radiation in a graphene–Weyl semimetal plasmonic structure
|
1.00 |
|
Metal oxide photoelectric synaptic transistor with CeOx floating gate and its application in neuromorphic computing
|
1.00 |
|
Low-damage dry etching process of Sc-Sb-Te phase-change memory film using a chlorine-based reactive atmosphere
|
1.00 |
|
Strain engineering for magnetoelectric coupling in flexible composite devices
|
1.00 |