|
Synergistic chlorophyll-derived polymer/NiOx hybrid electrodes for enhanced-performance biobased supercapacitors
|
|
Gate-length scaling of AlGaN/GaN HEMTs for cryogenic low-noise operation
|
|
All-optical bidirectional synaptic plasticity based on an IGZO voltage-divider architecture for neuromorphic visual perception
|
|
Temperature-driven crossover from abrupt thermal to gradual field-driven RESET in single-layer HfO2 RRAMs
|
|
Enhancement-mode GaN p-FET with p-NiO/p-GaN heterojunction gate featuring improved threshold voltage stability and channel conductivity based on low interface trap density
|
|
Strain-driven topological phase transition between anomalous valley Hall and quantum anomalous Hall states in hexagonal ferromagnets
|
|
Decoupled switching dynamics and series resistance effects in Ti/HfO2 complementary resistive switching systems
|
|
Resistive switching performance and mechanisms in Sb-doped perovskite-poly(9-vinylcarbazole) composite memristors
|
|
Achieving an ultra-thin GaN channel layer in AlGaN/GaN/AlN high electron mobility transistors
|
|
Large orbital torque with concurrent mitigation of magnetic damping in titanium/rare-earth lutetium metallic heterostructures
|
|
Raman-integrated scanning electrochemical cell microscopy for operando localized spectroelectrochemistry
|
|
Multifunctional triboelectric nanogenerator based on SCASN:Eu phosphor for integrated energy harvesting and photoelectric conversion
|
|
Visible light-driven photoelectric synaptic transistors based on Ga2O3/IGZO heterostructure for neuromorphic computing
|
|
Controllable multimodal switching in TaOx-based RRAM through Ar/O2 sputtering ratio and stacking sequence regulation
|
|
Atomic layer etching-enabled interface engineering for reduced subthreshold swing and improved uniformity in p-channel GaN MOSFETs
|
|
Monolayer WSe2 films synthesized by confined-space chemical vapor deposition
|
|
Multifunctional Janus TiSBr monolayer: Strain-tuned synergy of ferrovalley, quantum anomalous Hall, and anomalous Nernst effects
|
|
Ferroelectric switchable magnon valley and nonlinear Hall effect in type-I multiferroics
|
|
Evolution of boron nitride structures from hexagonal to cubic and wurtzite phases: A machine-learning potential approach
|
|
Time-domain electrical heating for broad-range and anisotropic thermophysical characterization of semiconductors
|
|
Foaming-induced structural engineering of graphite arrays for high-density thermal pathways in thermal interface materials
|
|
Hardware edge detection system based on a self-assembled vertically aligned ferroelectric memristor
|
|
Electron drift velocity measurement of AlGaN/GaN single- and multi-channel Fin structures
|
|
Non-pinched hysteresis in CrOx/TiOy-based memristive devices: Modeling and analysis
|
|
Digitally programmable kirigami metamaterials via magnetic encoding
|
|
Effective modulation of emission dynamics in Er:CaF2 crystal via oxygen anion engineering
|
|
Epitaxial growth of topological insulator β-Ag2Te thin films
|
|
Intrinsic nanoscale ordering and strain–defect coupling in ferroelectric Al1−xScxN
|
|
Anisotropic dielectric function of graphite probed by far- and near-field spectroscopies
|
|
Remote epitaxial growth of single-crystal cesium tin bromide perovskite on germanium substrates
|
|
Ultra-small-angle nonreciprocal thermal radiation via bound states in the continuum-driven topological phase singularity pairs without magneto-optical dielectrics
|
|
Sub-100-nm multistate spin–orbit torque magnetic tunnel junction enabled by local perpendicular anisotropy gradient
|
|
Impact of bond rupture dynamics at polar and non-polar interfaces on time-dependent dielectric breakdown (TDDB) of GaN FinFETs
|
|
Orientation-tunable local crystallization of Si films enabled by atomic imprint crystallization
|
|
Valence equivalence guided high-throughput search for stable monolayer MA2Z4 and M2A2Z4
|
|
Characteristics of transport properties in double-barrier AlGaN/GaN HEMT with ultra-high density 2DEG and high breakdown voltage
|
|
ZnCdSe/ZnS quantum dot hybrid film organic optoelectronic synaptic transistor for high-efficiency neuromorphic computing
|
|
Mechanism of point-defect-driven evolution in ferroelectricity of AlScN films
|
|
Excitation-dependent multi-color emission in lead-free double perovskites with Er3+–Yb3+ cross relaxation for information encryption
|
|
Ion irradiation defect engineering modulates thermal transport in MoS2/Si heterostructure
|
|
Wafer-scale dry transfer of graphene via thermally removable Sb2O3 sacrificial layer
|
|
Ultraflexible and stretchable multifunctional synaptic memristor by molecular layer deposition
|
|
Gate-controlled analog memcapacitance in LaAlO3/SrTiO3 interface-based devices
|
|
Study of leakage current in GaN junction field-effect transistor under heavy ion radiation
|
|
Gate voltage-controlled magnetic anisotropy at the Pt-porphyrin functionalized graphene/NiFe interface
|
|
Transient extension process of the off-state depletion region in GaN HEMTs with SiO2 passivation
|
|
Improved uniformity of nanoscale phase change material pitch line for high-density data storage
|
|
Significant impact of Al1−xGaxN interlayer on GaN/AlN thermal boundary conductance
|
|
Investigation of the RF performance degradation in GaN HEMTs associated with the kink effect
|
|
Nonlinear refractive index compensation enables accurate spectral shifting in varactor-driven plasmonic waveguides
|
|
Hydrogenation-induced gigantic resistance decrease of palladium films deposited by high pressure magnetron sputtering
|
|
On-chip electrically reconfigurable diffractive element and metalens with phase change material
|
|
Effect of Al2O3 capping layer on the crystallization behavior of optical Sb2S3 films
|
|
Bilayer oxide memristor based on IGZO/IAZO structure for artificial tactile perception system
|
|
Improved RF power performance in GaN-on-SiC HEMTs through thermal design of the GaN buffer layer
|
|
AlGaN (2.5%) fully vertical FinFETs: Influence of m- and a-plane substrate alignments
|
|
Wavelike thermal phonons revealed by localization in graphene phononic crystals
|
|
Robust Vth stability in normally off GaN HEMTs with a stacked p+/p−-NiO gate: Suppression of interface trapping and electric-field crowding
|
|
Growth of wurtzite HfxAl1−xN up to x = 0.39 by sputtering with bandgap shift and c/a-ratio anomaly
|
|
High-performance logic circuits based on Ag/ZnAl2O4/FTO resistive random-access memory devices
|
|
A 2.7 kV AlGaN/GaN high electron mobility transistor with an anti-parallel low turn-on voltage GaN Schottky barrier diode
|
|
Versatile far- and near-field polarization generation using self-complementary metasurface
|
|
Diffraction contrast imaging of hydrogen passivation of silicon using helium microscopy
|
|
Effects of pre-deposition annealing prior to gate insulator deposition in planar AlGaN/GaN MIS-HEMT with a thin AlGaN barrier layer
|
|
Dual-function Sb2S3/HfO2 memristor for reservoir computing and neural network learning via decoupled short- and long-term memory
|
|
Optoelectronic synapse based on a BiI3/Bi2Se3 van der Waals heterostructure for neuromorphic visions
|
|
Inelastic-stress-induced threshold instability and mobility degradation in AlN/GaN MIS-HEMTs on Si
|
|
Batch-fabricated PDMS templates for the robotic transfer of 2D materials
|
|
Investigation of AlN back barrier/GaN HEMTs with ultra-thin GaN channel for high-frequency and high-voltage applications
|
|
Latent transition unlocks visible-to-ultraviolet upconversion for covert optical security
|
|
Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
|
|
Effects of disorder on the optical properties of deep UV quantum well emitters as assessed by photonic atom probe
|
|
The nonreciprocal transmission of magneto-acoustic waves in Ni81Fe19/Cu/Co40Fe40B20 magnetic bilayer
|
|
Lattice geometry-dependent magnon modes and harmonic generation in Permalloy antidot waveguides
|
|
A fast-switching threshold memristor based on AlN/Ag/AlN stacked device for mental disorder electroencephalogram recognition
|
|
Fully optical switching memory based on an oxidized GQD–FeOx heterojunction with 106 negative photoconductance ratio
|
|
Interpretation of ferroelectric behavior in AlScN films with TiN and Ta bottom electrodes
|
|
Spinel CuGa2O4-based memristor enabling synaptic plasticity and associative learning for next-generation memory devices
|
|
Ferroelectric control of the layer-polarized anomalous Hall effect in a 2D TiClAsH bilayer via superposition engineering
|
|
Enhanced pseudocapacitance rectification by doping metalloid phosphorus in high entropy oxide (CrMnFeCoNi)3O4
|
|
Probing ultrafast-laser inscribed waveguides in Er:LiYF4 via μ-spectroscopy for refractive-index engineering
|
|
Aggregation modulation of conjugated polymers by carbon dots for optoelectronic synaptic transistors and artificial visual recognition
|
|
Tunable small-angle nonreciprocal radiation and broadband absorption in a GST–Weyl semimetal resonant structure
|
|
Opposite thermal conductivity trends in graphene and silicene driven by distinct interlayer coupling mechanisms
|
|
Strain-enabled polarity reversal of transport in Bi/MoS2 van der Waals heterostructures
|
|
Optoelectronic synaptic devices based on TMD alloys for image memory and processing
|
|
Wafer-scale growth of highly textured TiTe2/Ge2Sb2Te5 heterostructure thin films
|
|
Anomalous dynamic on-resistance instability mechanisms of p-GaN gate AlGaN/GaN HEMTs under power cycling tests
|
|
Experimental and computational study of the high-temperature 2DEG mobility in AlGaN/GaN heterostructures
|
|
First observations of avalanche-like behavior in p-GaN gate HEMTs with the buffer avalanche triggered layer
|
|
Mechanistic insight and demonstration of antiferroelectric-gated enhancement-mode GaN HEMTs
|
|
Characterization of vertical AZO/p-GaN/n-GaN heterojunction bipolar transistor
|
|
Enhanced ferroelectric endurance in ScAlN by interfacial oxide reconstruction
|
|
Silicon nitride integrated electro-optic absorption modulator
|
|
Unveiling the role of grain boundaries in driving in-plane conductive filament formation in MoS2 neuromorphic devices
|
|
Structural and ferroelectric properties of sputter-epitaxial ScAlN on GaN grown at various temperatures
|
|
Three-terminal memcapacitive synapses based on a thin H-TiO2 layer
|
|
A mechanism of defect creation in amorphous Ta2O5
|
|
Design and performance study of high-efficiency self-powered photodetectors based on ZnO/X2CO2 (X = Zr, Hf) heterojunctions
|
|
Dynamic magnetoelectric effect in multiferroic DyCrO4
|
|
Nanoscale thermal effect induced in situ Cu-based memristor
|
|
Achieving analog and digital resistive switching for quasi-2D perovskite memristors by compositional regulation and crystalline manipulation
|
|
Effect of doping on the ferroelectric properties of wurtzite Al1−xYxN
|
|
3.89-kV AlGaN/GaN Schottky barrier diodes on silicon substrate with BaTiO3 field plate termination
|
|
High-performance Ku-band thin-barrier AlGaN/GaN MIS-HEMTs on Si using high-stress LPCVD-SiN passivation for low-voltage applications
|
|
Interlayer interaction controllable multiple anomalous Hall effect in bilayer Janus structures
|
|
Parallel 2DHG conduction in AlN/GaN/AlN HEMTs: Leakage mechanisms and electric field distribution
|
|
Pressure-controlled growth and mechanism of monolayer WSe2 via NaCl-assisted CVD
|
|
Valence band momentum imaging of NiTe2 by two-photon photoemission momentum microscopy
|
|
An incremental strategy for tunable anisotropic piezoelectricity in 2D materials
|
|
Impact of high-pressure annealing on characteristics of InGaAs/InAlAs metamorphic high-electron mobility transistors
|
|
Engineering neuromorphic phase-change memory: Carbon-doped GeSbTe with high thermal stability and low resistance drift
|
|
Controllable intrinsic defect-induced electronic structure modulation in few-layer pentagonal PdPS
|
|
Temperature-dependent wake-up phenomena in AlScN ferrodiode memory devices
|
|
Modulation of Fe doping tail for high CW power handling and OIP3 in HEMT-based RF switches compatible with PA co-integration
|
|
Enhanced conductance linearity in HfS2-based optoelectronic memristors via a defective h-BN interlayer for high-performance neuromorphic visual system
|
|
MOF-derived graphene/chromium oxide hybrids via laser processing for enhanced planar micro-supercapacitors
|
|
Trap-induced degradation mechanisms in quasi-vertical GaN PiN diodes under the combined effects of high-energy heavy ion irradiation and off-state reverse bias
|
|
Bidirectional optically modulated In2O3 transistors with inorganic solid electrolyte gating for neuromorphic visual systems
|
|
Polarization-controlled multistate thermal conductivity in ferroelectric HfO2 thin films
|
|
Varistructure resistive switching memory devices through dynamical redox of oxides
|
|
Investigation on the mechanism of stability variation with gate–drain bias in AlGaN/GaN-on-Si HEMTs
|
|
Microscopic origin of metal–insulator transition in two-dimensional Bi2O2Se unraveled by first-principles simulations
|
|
Single-crystal PMN-PT gated ferroelectric field-effect transistor for artificial visual application
|
|
Evolution of polarization switching kinetics in an Al0.8Sc0.2N ferroelectric film with electric field cycling
|
|
Correlation between microstructural changes and phonon shifts in O−-implanted FeS2 thin films
|
|
Theoretical investigation of performance-improved ferroelectric tunnel junction based on trap-assisted tunneling
|
|
Controlled synthesis of large-area monolayer Janus MoSSe nanostructures based on interface strain-induced strategy
|
|
Ferroelectric-gated highly sensitive InGaAs nanowire near-infrared photodetectors
|
|
Uncovering enhanced ferroelectricity: Substituent-driven design of wurtzite ZnO materials
|
|
UV light-induced graphene/GaN heterojunction photomemory devices with negative photocurrent
|
|
Curvature-dependent spin-wave resonance of magnetic bimerons in cylindrical nanotubes
|
|
Tuning the nucleation barrier energy of nonvolatile polymeric memristor by reducing its active layer thickness for threshold switching
|
|
Compound semiconductor direct wafer bonding by crystal heterogeneous integration
|
|
Direct observation of atomic configuration of a highly oriented MoS2 film/α-Al2O3 (0001) using atomic resolution electron microscopy
|
|
Valley manipulation in 2D multiferroic TiInSe3: Doping-induced valley polarization and stacking-engineered effects
|
|
Switching dynamics of oxygen-vacancy memristors based on cuprate superconductors
|
|
Optimization of electric field distribution for AlGaN/GaN MIS-HEMT with thick i-GaN cap layer
|
|
Fabrication of robust suspended structures using tilted e-beam lithography
|
|
Thermal and microwave performance enhancement of AlGaN/GaN HEMT using an ultra-thin buffer on Si substrate for handset applications
|
|
Tri-terminal IGZO optoelectronic synapse with photoelectric co-modulation for neuromorphic computing
|
|
Influence of Bi surfactant on tetrahedral N interstitial formation and optoelectronic properties of dilute GaAsN alloys
|
|
Transition metal oxide-based heterostructure memristors for nonvolatile ternary resistive switching realization
|
|
Enhanced breakdown voltage in β-Ga2O3 Schottky diodes via fast neutron irradiation and electro-thermal annealing
|
|
Effects of oxygen thermal annealing on AlN trench metal-semiconductor field-effect transistors (MESFETs) on single-crystal AlN substrates
|
|
Electro-optically co-modulated ZnS synaptic memristor for neuromorphic recognition systems
|
|
Dipole modulated switching in an energy-efficient flexible organic bilayer memristor
|
|
Gradient-segmented flag triboelectric nanogenerator for omnidirectional wind sensing and self-powered warning
|
|
Enhanced thermal performance of AlN/GaN/AlN XHEMTs on bulk AlN by suppression of phonon-boundary scattering
|
|
High-entropy negative thermal expansion oxide with thermally enhanced upconversion luminescence
|
|
Probing the features of electron dispersion by tunneling between slightly twisted bilayer graphene sheets
|
|
Resonant distance spectroscopic microwave impedance microscopy
|
|
Tuning magnetocaloric effect of monolayer via flexomagnetism
|
|
All electrical detection of thermal Hall angle by on-slab thermocouples
|
|
Nonvolatile bidirectional photoresponse in a fully CMOS-compatible FeFET for in-sensor computing
|
|
Improved electrical performance of LiNbO3 domain wall memories after thinning of interfacial layers at low temperatures
|
|
Atmospheric neutron irradiation effects on conductance update linearity of Mg:HfOx (9 at. %)-based memristive synapse
|
|
The Hall effect and localized transport
|
|
Lowering Cr3+-dimer excited states via In3+-mediated crystal field weakening in spinel: A route to long-wavelength broadband NIR luminescence
|
|
Plasmon-enhanced Sb2Te3/FTO heterojunction optoelectronic synapses for image compression encoding and high-accuracy recognition
|
|
Wigner crystallization of localized electrons in a flash memory
|
|
Low-power flexible MXene-based resistive random access memory by oxygen plasma
|
|
A morphologically self-consistent phase field model for the computational study of memristive thin film current–voltage hysteresis
|
|
Modulating the carrier transport at 2D semiconductor/high-k oxide interfaces with 2D hBN interfacial layers
|
|
Ferrovalleytricity in 2D multiferroic lattice with self-doped valley carriers
|
|
A threshold memristor based on self-assembled vertically aligned nanocomposite SrTiO3:Eu2O3 film for simulating biological pain receptors and LIF neurons
|
|
Optically tunable synaptic transistors based on AlGaN/GaN heterostructure for neuromorphic vision processing
|
|
Toward stable gate-controlled GaSb nanowires near-infrared photodetection and photocommunication
|
|
High-performance BST:MgO memristor with optoelectronic synaptic plasticity for bio-inspired visual memory
|
|
Influence of heterovalent doping on tetrahedral N interstitial formation in dilute GaAsN alloys
|
|
Magnetically enhanced quasi-zero-stiffness galloping harvester for efficient wind energy harvesting and autonomous sensing
|
|
0D/1D mixed-dimensional heterojunction synaptic transistor for visual information processing
|
|
Thickness-dependent optical and structural properties of chalcogenide phase-change memory thin films grown at room temperature by pulsed laser deposition
|
|
Thermal transport mapping in twisted double bilayer graphene
|
|
Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires
|
|
Broadband light emission from GaAsP and GaInP islands grown on silicon nanotip wafer via nanoheteroepitaxy
|
|
Superior rectification self-rectifying memristors with self-recovery capabilities enabled by GaOx/InOx heterostructures
|
|
Tailoring of thermal conductance across two-dimensional MoS2 and polymer interface by self-assembled monolayer
|
|
Unraveling the four-phonon scattering mechanism in the exceptional thermal conductivity of TTH-carbon
|
|
Investigation of anomalous positive bias temperature instability in GaN MIS-HEMTs with PEALD SiNx gate dielectrics
|
|
Ultraprecise anisotropy mapping of Young's modulus in single-crystal diamond via mechanical resonance
|
|
Scalable, non-contact determination of electric properties of nanostructures via electro-rotation in water solution
|
|
Optimal layer thickness and junction temperature of GaN HEMTs based on bias-dependent non-uniform heat source model
|
|
Optimal growth conditions for strained GaAs/InxAl1−xAs core–shell nanowires with enhanced electronic properties
|
|
Highly reliable perovskite-based memristors using Ag nanoparticles/FA2PbI4 junctions for enhanced memory and optoelectronic synaptic performance
|
|
Laser-induced surface restructuring of carbon dots enables tunable multicolor photoluminescence via microcavity confinement
|
|
Revealing the size dependence on point field emitter emission beam through continuous work function and atomic precise electric field
|
|
Ferroelectric tunnel junction based on ultrathin Zr0.75Hf0.25O2
|
|
Establishment and modulation of linear VTH model with low interface states using atomic layer etching for E-mode GaN-based P-MOSFETs for digital logic application
|
|
Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering
|
|
Direct observation of the strong thermal non-equilibrium between optical and acoustic phonons in monolayered 2D materials
|
|
Reverse current suppression of p-GaN diode using SiOx interlayer
|
|
Investigation of the γ-irradiation-induced degradation mechanism of p-channel p-GaN/u-GaN/AlGaN MESFETs
|
|
Defining the magnetic configuration of the artificial spin system by FIB fabrication
|
|
Low-loss GaN monolithic bidirectional switch via antiparallel connected HEMTs with recessed Schottky drain
|
|
High-photosensitivity optoelectronic synaptic transistors based on triple-cation perovskite for neuromorphic vision system
|
|
Molecular beam epitaxy of In-assisted ScAlN/GaN HEMT structures with ultralow sheet resistance
|
|
Crystal orientation dependence of extreme near-field heat transfer between polar materials governed by surface phonon modes
|
|
Growth and characterization of high-quality h-BN single-layer films on Si-incorporated Ni (111) via molecular beam epitaxy
|
|
Two-dimensional metals thickness scaling effect on electrical contact in metal–semiconductor junctions: Carrier transport and ultrafast dynamics study
|
|
Nonvolatile regulation of room-temperature electronic properties of Cr:In2O3 thin films by ferroelectric polarization charge and light illumination
|
|
Optical phonon-driven modulation of interlayer thermal transport in stacked diamane
|
|
Enhancement of surface acoustic wave amplification by drifting electrons in graphene under microwave irradiation
|
|
Ferroelectricity of wurtzite Be1−xMgxO from first-principles calculation
|
|
Enhanced resistance switching ratio of Hf0.5Zr0.5O2-based film through reducing oxygen vacancy concentration
|
|
Nonmonotonic phonon thermal conductivity modulated by electron–phonon interaction in graphene/h-BN heterostructures
|
|
Enhancement of spin–orbit torque in sputtered BiSb-based perpendicular magnetic tunnel junctions for neuromorphic computing applications
|
|
Polarization-enhanced conductivity in enhancement-mode GaN p-FET
|
|
Ultralow lattice thermal conductivity and glass-like thermal transport induced by double stacking faults in monolayer MS2 (M = Mo, W)
|
|
Record-high electron mobility at near pinch-off in N-polar GaN HEMT structures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy
|
|
Interfacial synergy of micro-/nanoscale triboelectric materials for efficient triboelectric nanogenerators
|
|
Rapid, versatile, and reliable metrology for multi-layer transition metal dichalcogenide thin films using atomic force microscopy to investigate surface grain distributions
|
|
Development of the self-aligned top-gate MoS2 transistor with the recorded radiation tolerance
|
|
Photovoltaic effects of the GaAs (110) substrate and GaAs/AlGaAs core–shell nanowires
|
|
High-speed and multi-level AlScN ferroelectric memristor on CMOS-compatible tungsten for electronic synapses
|
|
Strain-driven interfacial engineering in metal–MoS2 contacts
|
|
Stable high-temperature operation of E/D-mode tri-gate AlGaN/GaN MIS-HEMTs with digital recess technique for monolithic integration
|
|
Selective microthermal actuation enabled by complex patterning of laser-induced graphene
|
|
Enhanced reliability of Hf0.5Zr0.5O2 ferroelectric memory through WOx buffer layer to minimize oxygen vacancies
|
|
Lattice dynamics of piezoelectric response of 2D Janus Y2Se2IF under strain
|
|
Thermal boundary resistance measurement of GaN/Al2O3 interfaces based on heat source thermometry separation integrated chip
|
|
Performance enhancement in NbO2/HfO2 bilayer threshold switching memristor as an oscillatory neuron
|
|
Gate leakage mechanisms caused by 60Co gamma irradiation on p-GaN gate AlGaN/GaN HEMTs
|
|
Al3+ doping-induced proton spatial inversion symmetry breaking in two-dimensional vermiculite: Intrinsic polarization and ferroelectric switching
|
|
Trap-suppressed channel temperature measurement and thermal resistance characterization model for GaN HEMTs
|
|
Programming optimization for alleviating relaxation effect in RRAM high-resistance state
|
|
Low loss 4H-SiC photonics for spin-quantum sensing
|
|
Thermal imaging of anomalous Ettingshausen effect at low temperatures using infrared lock-in thermography
|
|
High performance vertically integrated double barrier AlN memristive nonvolatile resistive random-access memory
|
|
MXene-tailored CNT cold cathodes and self-powered electron emitters toward plasma generation
|
|
Resistive switching in SrFeO2.5/Nb:SrTiO3 heterostructures with growth-controlled film orientation
|
|
Analytical model of a Tellegen meta-atom
|
|
Molecular beam epitaxy and electronic structures of rare-earth selenide EuSe thin films
|
|
Impact of process control on electrical breakdown characteristics of quasi-one-dimensional ZrTe3 interconnects
|
|
Dual-polarization metalens with dynamically reconfigurable focal position in three dimensions based on the Moiré effect
|
|
Cu-doped poly(1,8-diaminonaphthalene) enables high-rate and long-cycle stability for quasi-solid-state supercapacitors
|
|
Controlled filament stability in SrTiO3 memristors via swift Xe ion irradiation
|
|
Continuously tunable uniaxial strain engineering of two-dimensional materials under scanning probe microscopy
|
|
Two-terminal Li+-based memristors with synchronous conductance modulation of Li-source/Li-reservoir layer for high-accurate image recognition
|
|
Suppressing endurance degradation in lead-free perovskite Cs3Bi2Br9 memristors: Grain engineering via annealing temperature and grain boundary passivation with PEG additive
|
|
Reference black-body radiation source for emissivity measurements on the frequency range 3–30 THz
|
|
Controlled synthesis of large-area MoS2/MoO2 heterostructure via one-step, two-stage chemical vapor deposition for electrocatalytic hydrogen evolution reaction
|
|
Robust low-temperature ferroelectric behavior of Al0.75Sc0.25N films
|
|
Temperature dependent characterization of 140–180 nm AlGaN/GaN HEMTs using DC and small-signal RF measurements
|
|
Mitigation of self-heating in AlGaN/GaN HEMTs using transferred LPCVD-grown h-BN
|
|
A phase jump phenomenon within the beat signal for dynamic target measurement in frequency-sweeping interferometry
|
|
Observation of three types of NDR in flexible VOx Mott memristors
|
|
Enhanced mobility via diluted polarization in graded AlGaN/GaN systems
|
|
Defect-dominated resistive switching of 2D MoTe2 nanosheets for artificial synapses and decimal arithmetic
|
|
Enhanced altermagnetic splitting through modulating altermagnetic-ferroelectric coupling in monolayer multiferroic Ti2S2O
|
|
Endogenic ion–electron coupling effect in rGO–Fe2O3 heterostructure for optoelectronic neuromorphic memcapacitor
|
|
Synaptic plasticity simulates behavior of low-voltage solution-processed Ag-doped CuI thin film transistors
|
|
Pulsed mode atomic layer etching of ScAlN using Cl2/C2H4/Ar
|
|
Nanoscale p–n junctions based on conductive domain walls in lithium niobate films on insulators
|
|
Enhanced performance of normally-off AlGaN/GaN MOS-HEMTs taking advantage of extreme-k BaTiO3 with prominent dielectric polarization
|
|
Signature of coupling of potentials in non-linear energy harvesters with enhanced figure of merit
|
|
Carbon-atom-chain-based spin filters
|
|
Aluminum: A qualified material for Tamm plasmon polariton in visible band
|
|
Self-powered broadband photodetection and bias-tunable infrared optoelectronic synapses: Dual-functional device based on asymmetric Schottky contact Au/WSe2/1T'-MoTe2 heterojunction
|
|
Impact of a thin AlN buffer layer on the characteristics of GaN high electron mobility transistors on a silicon substrate
|
|
Tailoring magnetic anisotropy via built-in strain in thin films
|
|
Direct nanoscale conductivity measurements of surface tracking on epoxy nanocomposites
|
|
Low leakage fully-vertical GaN-on-Si power MOSFETs
|
|
Low-voltage driven I–V hysteresis loop in Ag/SrTiO3/Si heterostructure
|
|
10 kV E-mode GaN HEMT: Physics for breakdown voltage upscaling
|
|
TaOx-based bifunctional memristor for compact leaky integrate-and-fire neuron
|
|
Compact backward effective spoof surface plasmon polaritons (BESSPPs) for high-performance millimeter-wave application
|
|
Self-rectifying memristors based on epitaxial AlScN for neuromorphic computing
|
|
Regulating anisotropy in 2H-MoTe2/CrOCl heterojunction with hysteresis effect
|
|
Ferroelectric polarization-driven ionic modulation enabling enhanced self-rectification in NiOx/HfO2−x: Al memristors
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Impedance-dependent degradation in GaN HEMTs under high-voltage RF stress: Electro-thermal and trap mechanisms
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Tuning current-induced electron wind forces for adsorbates on graphene
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Passive metasurface gyrators combining chiral and gyromagnetic effects
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Atomic layer deposition and characterization of scandium aluminum nitride
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Magnetic skyrmions in confined nanocap geometries
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Thickness-driven drastic transition in the electrical conductivity of ultrathin MoS2 films grown by pulsed laser deposition
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Electrical stress-induced damage in TiN/Ti/HfO2/W memristors: The critical role of voltage polarity and vacuum condition
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Demonstration of high threshold voltage Tri-gate hybrid ferroelectric gate stack GaN HEMT with 1.2 GW/cm2 Baliga's figure-of-merit and highly robust TDDB stability
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AlN-based unipolar memristors with symmetrical Al electrodes: Preparation, characterization, and test
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Beryllium-incorporated ScAlN/GaN HEMTs with low off-current and high current stress stability
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Optoelectronic memristive sensor with reconfigurable logic operation capability in ZnO/Nb:SrTiO3 heterojunction
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Unveiling charge-trapping storage capacity in MoS2/BiFeO3 heterostructure
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Enhancing vibration isolation and energy harvesting via a quasi-zero stiffness electromagnetic system
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Sc-rich monocrystalline ScGaN grown by MBE exhibits attractive ferroelectric properties
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Deep learning-based molecular dynamics simulation reconfiguration of efficient heat energy transport of Gra/h-BN heterointerface
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A passivation study for AlInAsSb avalanche photodiodes
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Terahertz multi-foci metalens with polarization-dependent/independent focal points and reconfigurable imaging
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Effects of defects in graphene on molecular beam epitaxy of CdTe on graphene/Ge
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Enhanced field emission properties of graphene composite films by introducing graphene oxide
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Molecular electrodes enable faster switching in ferroelectric thin films
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Enhancement of resistive switching properties in RRAM with AlN-Al2O3 bilayer structure
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Valley polarization and anomalous valley Hall effect in altermagnet Ti2Se2S with multipiezo properties
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An organic optoelectronic synaptic transistor for image preprocessing
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Reading the interaction between vortex textures in an FORC diagram
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Enhancement of long-term memory of IGZO synaptic transistors by the introduction of an Al2O3 charge trapping layer
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Angle-independent coupling between topological interface states and Tamm states in photonic crystal heterostructures with hyperbolic metamaterials
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Parametric metasurfaces for amplified upconversion of electromagnetic waves
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Low-voltage transistor array with dynamic synaptic plasticity for neuromorphic computing
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Giant super-Nernstian potentiometric response of InN quantum dots on self-formed core–shell InGaN nanowires
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GaN cap impacts on gate leakage mechanisms in AlGaN/GaN high-electron mobility transistors
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Nonlinear Seebeck effect in Ni81Fe19|Pt at room temperature
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Anomalous valley Hall effect in two-dimensional p-orbital honeycomb lattice
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The effects of vacancies and strain on the magnetism of tellurene
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Ferroelectric control of antiferromagnetism via coordination swapping in A2Mo3O8 (A = Mn, Fe, Co)
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MoS2–MoSe2 nanoflakes-based n–n heterojunction toward highly sensitive and selective room-temperature NO2 gas sensor
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Effect of intermolecular explosion on thermal conductivity in multi-graphene structures
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A non-invasive dry-transfer method for fabricating mesoscopic devices on sensitive materials
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Insulating tip for scanning near-field microwave microscopes: Application to van der Waals semiconductor imaging
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A multi-modal bidirectional galloping energy harvester with mode transition for alternating wind directions
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Phase zonal reconstruction via differential metasurface
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Defect enhancement of Er emission in single crystal Er2O3
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Double-channel AlGaN/GaN Schottky barrier diode with AlN super back barrier on SiC substrate
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Low-temperature-annealed Ohmic contacts to ultrathin-AlGaN/GaN heterostructures with no two-dimensional electron gas
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Graphene enhanced resonant Raman spectroscopy of gallium nitride nanocrystals
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Twist angle dependence of flatbands in trilayer graphene: A first-principles study
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Sodium dopant in pectin mediates ionic-electronic coupling on Na0.67Mg0.28Mn0.72O2 for electrolyte-type artificial synapse with tunable plasticity
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Nonlinear transport in carbon quantum dot electronic devices: Experiment and theory
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Dielectric breakdown of atmospheric-pressure grown hexagonal boron nitride single crystals
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N-polar gallium nitride doping by atomic layer deposition for improved electrical performance
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Determining two-dimensional electron densities in AlGaN/GaN high electron mobility transistors using photoluminescence excitation
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Diameter scaling limit of catalytic silicon nanowires confined by optimized ultrafine sidewall grooves
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Low-power optoelectronic synaptic devices with ZnMgO in deep-ultraviolet encryption computation
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Origin of magnetic switching cascades in nanostructured Co3Fe tetrapods
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Resonant dynamics governed by interlayer frozen bubbles in h-BN/graphene heterostructures
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The impact of defect evolution on the electrical performance of AlGaN/GaN HEMT after 14-MeV neutron irradiation
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Stable GaN nanoscale air channel array with ultralow-operated voltage and enhanced output current
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MOCVD AlYN/GaN HEMTs with 66.5 mV/decade sub-threshold swing and 109 on/off ratio
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Effect of hydrogen on electrical properties and defects of AlGaN/GaN HEMTs
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Oxygen plasma and post-annealing assisted surface oxidation for high-Vth E-mode p-GaN HEMTs
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Assessing electric-field engineering of filamentary-type conduction in Cu/HfO2/Pt memristive devices using the quantum point-contact model
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THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure
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Integration of top-side low-temperature diamond on AlGaN/GaN RF HEMT for device-level cooling
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Transparent multifunctional memristor based on amorphous InAlZnO for biomimetic sensing system
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NiOx gate oxide for enhanced thermal stability of threshold voltage in GaN MIS-HEMTs up to 400 °C
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Inversion-sensing SiO2-based MOS capacitive synapse for neuromorphic computing
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Development of millimeter-thick hexagonal boron nitride wafers and fast neutron detectors
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Artificial synapses based on CIPS/Te vdW heterojunction ferroelectric transistor for traffic light recognition
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Tunable spin-valley states in collinear-antiferromagnetic Janus Re2X3Y3 (X, Y I, Br, Cl; X ≠ Y) monolayers
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Silicon-based van der Waals heteroepitaxy of PbSe with room-temperature sensitive mid-infrared response
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Anomalously dominating four-phonon scattering in pressure-dependent thermal transport in beryllium oxide
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In situ measurement of AlxGa1−xAs growth rate and composition by magnification inferred curvature method
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Annealing effects on crystalline quality and device performance of ultrawide bandgap h-BN quasi-bulk crystals
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Dynamic tuning of surface lattice resonances via mechano-optical coupling in flexible nanoring metasurfaces
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Engineering spin-wave dynamics in magnetic nanowires: The role of morphology and aspect ratio
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Continuous zoom metalens based on the polarization state of light source in the ultraviolet band
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Demonstration of a GaN-based P-channel FinFET with high current density based on multi-channel structure
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MoS2-based transistor with asymmetric Schottky contacts for self-powered broadband photodetection and visual synapse
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Metal oxide photoelectric synaptic transistor with CeOx floating gate and its application in neuromorphic computing
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Dynamic modulation of dual-band nonreciprocal radiation in a graphene–Weyl semimetal plasmonic structure
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Thermal transport and accommodation coefficient at the air–MoS2 interface
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Strain engineering for magnetoelectric coupling in flexible composite devices
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Low-damage dry etching process of Sc-Sb-Te phase-change memory film using a chlorine-based reactive atmosphere
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Comparative Raman study of graphene on BaTiO3 (001) and (111) single crystals: Temperature-driven evolution of ferroelectric domains
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